Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey. - W. Deweerd; Vidya Kaushik; J. Chen; Y. Shimamoto; Tom Schram; L.-Å. Ragnarsson; Annelies Delabie; Luigi Pantisano; B. Eyckens; J. W. Maes (Microelectron. Reliab., 2005)

Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET. - Hiroaki Arimura; S. Brus; Jacopo Franco; Yusuke Oniki; A. Vandooren; T. Conard; B. T. Chan; B. Kannan; M. Samiee; W. Li; P. Deminskyi; E. Shero; et al. (VLSI Technology and Circuits, 2023)

Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. - S. Rachidi; S. Ramesh; Davide Tierno; G. L. Donadio; A. Pacco; J. W. Maes; Y. Jeong; Antonio Arreghini; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2024)

DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAM. - J. Ganguly; Hiroaki Arimura; Romain Ritzenthaler; H. Bana; J. W. Maes; J. G. Lai; S. Brus; W. Maqsood; R. Sarkar; B. Kannan; Elena Capogreco; V. Machkaoutsan; et al. (VLSI Technology and Circuits, 2024)

Backside Power Delivery with relaxed overlay for backside patterning using extreme wafer thinning and Molybdenum-filled slit nano Through Silicon Vias. - P. Zhao; Liesbeth Witters; Anne Jourdain; Michele Stucchi; Nicolas Jourdan 002; J. W. Maes; H. Bana; C. Zhu; R. Chukka; F. Sebaai; Kevin Vandersmissen; N. Heylen; et al. (VLSI Technology and Circuits, 2024)