Scaling-Induced Reductions in CMOS Reliability Margins and the Escalating Need for Increased Design-In Reliability Efforts. - J. W. McPherson (ISQED, 2001)

Mie-Grüneisen Analysis of the Molecular Bonding States in Silica Which Impact Time-Dependent Dielectric Breakdown. - J. W. McPherson (Microelectron. Reliab., 2004)

Reliability challenges for 45nm and beyond. - J. W. McPherson (DAC, 2006)

Reliability Trends with Advanced CMOS Scaling and The Implications for Design. - J. W. McPherson (CICC, 2007)

Time dependent dielectric breakdown physics - Models revisited. - J. W. McPherson (Microelectron. Reliab., 2012)

Understanding the underlying degradation physics for proper time-to-failure distribution selection. - J. W. McPherson (IRPS, 2015)

Brief history of JEDEC qualification standards for silicon technology and their applicability(?) to WBG semiconductors. - J. W. McPherson (IRPS, 2018)

Degradation Monitoring - from a Vision to Reality. - Evelyn Landman; Shai Cohen; Noam Brousard; Raanan Gewirtzman; Inbar Weintrob; Eyal Fayne; Yahel David; Yuval Bonen; Omer Niv; Shai Tzroia; Alex Burlak; J. W. McPherson (IRPS, 2019)

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations. - Edward Van Brunt; Daniel J. Lichtenwalner; J. H. Park; Satyaki Ganguly; J. W. McPherson (IRPS, 2023)