17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization. - Taejoong Song; Woojin Rim; Sunghyun Park 003; Yongho Kim; Jonghoon Jung; Giyong Yang; Sanghoon Baek; Jaeseung Choi 001; Bongjae Kwon; Yunwoo Lee; Sungbong Kim; Gyu-Hong Kim; et al. (ISSCC, 2016)

World's First GAA 3nm Foundry platform Technology (SF3) with Novel Multi-Bridge-Channel-FET (MBCFET™) Process. - Jaehun Jeong; Sanghyeon Lee; Sada-Aki Masuoka; Shincheol Min; Sanghoon Lee; Seungkwon Kim; Taehun Myung; Byungha Choi; Chang-Woo Sohn; Sung Won Kim; Jeongmin Choi; Jungmin Park; et al. (VLSI Technology and Circuits, 2023)

Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells. - Kihwang Son; Seulki Park; Kyunghoon Jung; Jun-Gyu Kim; Younggun Ko; Keonyong Cheon; Changkeun Yoon; Jiho Kim; Jaehun Jeong; Taehun Myung; Changmin Hong; Weonwi Jang; et al. (VLSI Technology and Circuits, 2023)

Product Performance Aware 3rd Generation GAA Platform Transistor Design with Extreme Small Local Layout Effect and Transistor Variation. - Dongchan Jeong; Seungkwon Kim; Seulki Park; Sanghyeon Lee; Sada-Aki Masuoka; Byungha Choi; Shincheol Min; Sanghoon Lee; Minseong Lee; Chang-Woo Sohn; Jaehun Jeong; Yuri Yasuda-Masuoka; et al. (VLSI Technology and Circuits, 2024)

14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles. - Joosung Oh; Jaehyeon Park; Kiseok Suh; Kangmoon Lee; Sohee Hwang; Myeongjun Bak; Honghyun Kim; Baeseong Kwon; DongKyu Lee; Minkwan Kim; Seungmo Noh; Jongmin Lee; et al. (VLSI Technology and Circuits, 2024)