Theoretical studies of high field electron transport in silicon devices - Jack M. Higman (1989)

A numerical method to compute isotropic band models from anisotropic semiconductor band structures. - Antonio Abramo; Franco Venturi; Enrico Sangiorgi; Jack M. Higman; Bruno Riccò (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993)

SRAM Vmax stability considerations. - David Burnett; Sriram Balasubramanian; Vivek Joshi; Sanjay Parihar; Jack M. Higman; C. Weintraub (IRPS, 2015)

A Simplified Yield Model for SRAM Repair in Advanced Technology. - Xiaoyuan Qi; Raymond J. Rosner; John Hopkins; Jack M. Higman; Rick Mewhirter; Aaron Sinnott; Binod Kumar G. Nair; Ishtiaq Ahsan; Mark Lagus (IEEE Trans. Very Large Scale Integr. Syst., 2018)

An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM. - Randy W. Mann; Meixiong Zhao; Sanjay Parihar; Qun Gao; Ankur Arya; Carl Radens; Shesh Mani Pandey; Joseph Versaggi; Jack M. Higman; Rick Carter (IEEE Trans. Very Large Scale Integr. Syst., 2019)

An Energy-Efficient and High Throughput in-Memory Computing Bit-Cell With Excellent Robustness Under Process Variations for Binary Neural Network. - Gobinda Saha; Zhewei Jiang; Sanjay Parihar; Xi Cao; Jack M. Higman; Muhammed Ahosan Ul Karim (IEEE Access, 2020)

Bias-Dependent Variation in FinFET SRAM. - Randy W. Mann; Meixiong Zhao; Oh Sung Kwon; Xi Cao; Sanjay Parihar; Muhammed Ahosan Ul Karim; Jack M. Higman; Joseph Versaggi; Rick Carter (IEEE Trans. Very Large Scale Integr. Syst., 2020)