Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. - Felice Crupi; Massimo Alioto; Jacopo Franco; Paolo Magnone; Ben Kaczer; Guido Groeseneken; Jérôme Mitard; Liesbeth Witters; Thomas Y. Hoffmann (ISCAS, 2011)

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. - Jacopo Franco; Ben Kaczer; Jérôme Mitard; Maria Toledano-Luque; Felice Crupi; Geert Eneman; Ph. J. Rousse; Tibor Grasser; M. Cho; Thomas Kauerauf; Liesbeth Witters; Geert Hellings; et al. (ICICDT, 2012)

BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. - Jacopo Franco; S. Graziano; Ben Kaczer; Felice Crupi; Lars-Åke Ragnarsson; Tibor Grasser; Guido Groeseneken (Microelectron. Reliab., 2012)

Defect-centric perspective of time-dependent BTI variability. - Maria Toledano-Luque; Ben Kaczer; Jacopo Franco; Philippe Roussel; Tibor Grasser; Guido Groeseneken (Microelectron. Reliab., 2012)

Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements. - Felice Crupi; Massimo Alioto; Jacopo Franco; Paolo Magnone; Mitsuhiro Togo; N. Horiguchi; Guido Groeseneken (IEEE Trans. Circuits Syst. II Express Briefs, 2012)

Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. - Felice Crupi; Massimo Alioto; Jacopo Franco; Paolo Magnone; Ben Kaczer; Guido Groeseneken; Jérôme Mitard; Liesbeth Witters; Thomas Y. Hoffmann (IEEE Trans. Very Large Scale Integr. Syst., 2012)

Impact of Off State Stress on advanced high-K metal gate NMOSFETs. - Alessio Spessot; Marc Aoulaiche; Moonju Cho; Jacopo Franco; Tom Schram; Romain Ritzenthaler; Ben Kaczer (ESSDERC, 2014)

Characterization and modeling of charge trapping: From single defects to devices. - Tibor Grasser; Gerhard Rzepa; Michael Waltl; Wolfgang Goes; Karina Rott; Gunnar Andreas Rott; Hans Reisinger; Jacopo Franco; Ben Kaczer (ICICDT, 2014)

Characterization and simulation methodology for time-dependent variability in advanced technologies. - Pieter Weckx; Ben Kaczer; Praveen Raghavan; Jacopo Franco; Marko Simicic; Philippe J. Roussel; Dimitri Linten; Aaron Thean; Diederik Verkest; Francky Catthoor; Guido Groeseneken (CICC, 2015)

Experimental evidences and simulations of trap generation along a percolation path. - Louis Gerrer; Razaidi Hussin; Salvatore M. Amoroso; Jacopo Franco; Pieter Weckx; Marko Simicic; N. Horiguchi; Ben Kaczer; Tibor Grasser; Asen Asenov (ESSDERC, 2015)

Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. - Razaidi Hussin; Louis Gerrer; Jie Ding; Liping Wang; Salvatore M. Amoroso; Binjie Cheng; Dave Reid; Pieter Weckx; Marko Simicic; Jacopo Franco; Annelies Vanderheyden; Danielle Vanhaeren; et al. (ESSDERC, 2015)

The defect-centric perspective of device and circuit reliability - From individual defects to circuits. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Erik Bury; Moonju Cho; Robin Degraeve; Dimitri Linten; Guido Groeseneken; Halil Kukner; Praveen Raghavan; Francky Catthoor; et al. (ESSDERC, 2015)

NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. - Jacopo Franco; Ben Kaczer; Philippe J. Roussel; Erik Bury; Hans Mertens; Romain Ritzenthaler; Tibor Grasser; Naoto Horiguchi; Aaron Thean; Guido Groeseneken (IRPS, 2015)

ESD characterization of planar InGaAs devices. - Zhigang Ji; Dimitri Linten; Roman Boschke; Geert Hellings; S. H. Chen; AliReza Alian; D. Zhou; Yves Mols; Tsvetan Ivanov; Jacopo Franco; Ben Kaczer; X. Zhang; et al. (IRPS, 2015)

Origins and implications of increased channel hot carrier variability in nFinFETs. - Ben Kaczer; Jacopo Franco; M. Cho; Tibor Grasser; Philippe J. Roussel; Stanislav Tyaginov; M. Bina; Yannick Wimmer; Luis-Miguel Procel; Lionel Trojman; Felice Crupi; Gregory Pitner; et al. (IRPS, 2015)

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. - Abhitosh Vais; Koen Martens; Jacopo Franco; Dennis Lin; AliReza Alian; Philippe Roussel; S. Sioncke; Nadine Collaert; Aaron Thean; Marc M. Heyns; Guido Groeseneken; Kristin De Meyer (IRPS, 2015)

Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. - Pieter Weckx; Ben Kaczer; C. Chen; Jacopo Franco; Erik Bury; Kausik Chanda; J. Watt; Philippe J. Roussel; Francky Catthoor; Guido Groeseneken (IRPS, 2015)

Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. - Halil Kükner; Pieter Weckx; Sébastien Morrison; Jacopo Franco; Maria Toledano-Luque; Moonju Cho; Praveen Raghavan; Ben Kaczer; Doyoung Jang; Kenichi Miyaguchi; Marie Garcia Bardon; Francky Catthoor; et al. (Microprocess. Microsystems, 2015)

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. - Prateek Sharma; Stanislav Tyaginov; Stewart E. Rauch; Jacopo Franco; Ben Kaczer; Alexander Makarov; Mikhail I. Vexler; Tibor Grasser (ESSDERC, 2016)

Beyond-Si materials and devices for more Moore and more than Moore applications. - Nadine Collaert; AliReza Alian; Hiroaki Arimura; Geert Boccardi; Geert Eneman; Jacopo Franco; Tsvetan Ivanov; Dennis Lin; Jérôme Mitard; S. Ramesh; R. Rooyackers; Marc Schaekers; et al. (ICICDT, 2016)

Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling. - A. Vandooren; Liesbeth Witters; Jacopo Franco; Arindam Mallik; Bertrand Parvais; Z. Wu; Amey Walke; V. Deshpande; E. Rosseel; Andriy Hikavyy; W. Li; L. Peng; et al. (ICICDT, 2018)

Self-heating-aware CMOS reliability characterization using degradation maps. - Erik Bury; Adrian Vaisman Chasin; Ben Kaczer; Kai-Hsin Chuang; Jacopo Franco; Marko Simicic; Pieter Weckx; Dimitri Linten (IRPS, 2018)

Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. - Jacopo Franco; Ben Kaczer; Adrian Vaisman Chasin; Erik Bury; Dimitri Linten (IRPS, 2018)

Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. - Vamsi Putcha; Jacopo Franco; Abhitosh Vais; Ben Kaczer; S. Sioncke; Dimitri Linten; Guido Groeseneken (IRPS, 2018)

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Vamsi Putcha; Erik Bury; Marko Simicic; Adrian Vaisman Chasin; Dimitri Linten; Bertrand Parvais; Francky Catthoor; Gerhard Rzepa; et al. (Microelectron. Reliab., 2018)

Comphy - A compact-physics framework for unified modeling of BTI. - Gerhard Rzepa; Jacopo Franco; Barry J. O'Sullivan; A. Subirats; Marko Simicic; Geert Hellings; Pieter Weckx; Markus Jech; Theresia Knobloch; Michael Waltl; Philippe Roussel; Dimitri Linten; et al. (Microelectron. Reliab., 2018)

Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {VG, VD} bias space. - Erik Bury; Adrian Vaisman Chasin; Michiel Vandemaele; Simon Van Beek; Jacopo Franco; Ben Kaczer; Dimitri Linten (IRPS, 2019)

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. - Barry J. O'Sullivan; Romain Ritzenthaler; Gerhard Rzepa; Z. Wu; E. Dentoni Litta; O. Richard; T. Conard; V. Machkaoutsan; Pierre Fazan; C. Kim; Jacopo Franco; Ben Kaczer; et al. (IRPS, 2019)

Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. - Zhicheng Wu; Jacopo Franco; Dieter Claes; Gerhard Rzepa; Philippe J. Roussel; Nadine Collaert; Guido Groeseneken; Dimitri Linten; Tibor Grasser; Ben Kaczer (IRPS, 2019)

Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. - Adrian Vaisman Chasin; Jacopo Franco; Erik Bury; Romain Ritzenthaler; Eugenio Dentoni Litta; Alessio Spessot; Naoto Horiguchi; Dimitri Linten; Ben Kaczer (IRPS, 2020)

On the impact of mechanical stress on gate oxide trapping. - Anastasiia Kruv; Ben Kaczer; Alexander Grill; Mario Gonzalez; Jacopo Franco; Dimitri Linten; Wolfgang Goes; Tibor Grasser; Ingrid De Wolf (IRPS, 2020)

Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. - Vamsi Putcha; Erik Bury; Jacopo Franco; Amey Walke; Simeng Zhao; Uthayasankaran Peralagu; Ming Zhao; AliReza Alian; Ben Kaczer; Niamh Waldron; Dimitri Linten; Bertrand Parvais; et al. (IRPS, 2020)

Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. - Jacopo Franco; Hiroaki Arimura; J.-F. de Marneffe; A. Vandooren; L.-Å. Ragnarsson; Zhicheng Wu; Dieter Claes; E. Dentoni Litta; N. Horiguchi; Kris Croes; Dimitri Linten; Tibor Grasser; et al. (ICICDT, 2021)

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. - Tibor Grasser; Barry J. O'Sullivan; Ben Kaczer; Jacopo Franco; Bernhard Stampfer; Michael Waltl (IRPS, 2021)

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. - Gerhard Rzepa; Markus Karner; Oskar Baumgartner; Georg Strof; Franz Schanovsky; Ferdinand Mitterbauer; Christian Kernstock; Hui-Wen Karner; Pieter Weckx; Geert Hellings; Dieter Claes; Zhicheng Wu; et al. (IRPS, 2021)

The properties, effect and extraction of localized defect profiles from degraded FET characteristics. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Jacopo Franco; Robin Degraeve; Adrian Vaisman Chasin; Zhicheng Wu; Erik Bury; Yang Xiang; Hans Mertens; Guido Groeseneken (IRPS, 2021)

Physics-based device aging modelling framework for accurate circuit reliability assessment. - Zhicheng Wu; Jacopo Franco; Brecht Truijen; Philippe Roussel; Stanislav Tyaginov; Michiel Vandemaele; Erik Bury; Guido Groeseneken; Dimitri Linten; Ben Kaczer (IRPS, 2021)

A BSIM-Based Predictive Hot-Carrier Aging Compact Model. - Yang Xiang; Stanislav Tyaginov; Michiel Vandemaele; Zhicheng Wu; Jacopo Franco; Erik Bury; Brecht Truijen; Bertrand Parvais; Dimitri Linten; Ben Kaczer (IRPS, 2021)

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. - J. P. Bastos; Barry J. O'Sullivan; Jacopo Franco; Stanislav Tyaginov; Brecht Truijen; Adrian Vaisman Chasin; Robin Degraeve; Ben Kaczer; Romain Ritzenthaler; Elena Capogreco; E. Dentoni Litta; Alessio Spessot; et al. (IRPS, 2022)

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. - Erik Bury; Adrian Vaisman Chasin; Ben Kaczer; Michiel Vandemaele; Stanislav Tyaginov; Jacopo Franco; Romain Ritzenthaler; Hans Mertens; Pieter Weckx; N. Horiguchi; Dimitri Linten (IRPS, 2022)

Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. - Kookjin Lee; Ben Kaczer; Anastasiia Kruv; Mario Gonzalez; Geert Eneman; Oguzhan O. Okudur; Alexander Grill; Jacopo Franco; Andrea Vici; Robin Degraeve; Ingrid De Wolf (IRPS, 2022)

Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. - Vamsi Putcha; Hao Yu; Jacopo Franco; Sachin Yadav 001; AliReza Alian; Uthayasankaran Peralagu; Bertrand Parvais; Nadine Collaert (IRPS, 2022)

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Erik Bury; Adrian Vaisman Chasin; Jacopo Franco; Alexander Makarov; Hans Mertens; Geert Hellings; Guido Groeseneken (IRPS, 2022)

Degradation mechanisms and lifetime assessment of Ge Vertical PIN photodetectors. - Kristof Croes; Veerle Simons; Brecht Truijen; Philippe Roussel; Koen Van Sever; Artemisia Tsiara; Jacopo Franco; Philippe Absil (OFC, 2022)

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections. - A. Vandooren; N. Parihar; Jacopo Franco; Roger Loo; Hiroaki Arimura; R. Rodriguez; F. Sebaai; S. Iacovo; Kevin Vandersmissen; W. Li; G. Mannaert; D. Radisic; et al. (VLSI Technology and Circuits, 2022)

Reliability challenges in Forksheet Devices: (Invited Paper). - Erik Bury; Michiel Vandemaele; Jacopo Franco; Adrian Chasin; Stanislav Tyaginov; A. Vandooren; Romain Ritzenthaler; Hans Mertens; Javier Diaz-Fortuny; N. Horiguchi; Dimitri Linten; Ben Kaczer (IRPS, 2023)

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. - Michiel Vandemaele; Ben Kaczer; Erik Bury; Jacopo Franco; Adrian Chasin; Alexander Makarov; Hans Mertens; Geert Hellings; Guido Groeseneken (IRPS, 2023)

Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations. - Andrea Vici; Robin Degraeve; Philippe J. Roussel; Jacopo Franco; Ben Kaczer; Ingrid De Wolf (IRPS, 2023)

Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET. - Hiroaki Arimura; S. Brus; Jacopo Franco; Yusuke Oniki; A. Vandooren; T. Conard; B. T. Chan; B. Kannan; M. Samiee; W. Li; P. Deminskyi; E. Shero; et al. (VLSI Technology and Circuits, 2023)

Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions. - Jacopo Franco; Hiroaki Arimura; J.-F. de Marneffe; S. Brus; Romain Ritzenthaler; E. Dentoni Litta; Kris Croes; Ben Kaczer; N. Horiguchi (VLSI Technology and Circuits, 2023)

A Pragmatic Model to Predict Future Device Aging. - James Brown; Kean Hong Tok; Rui Gao 003; Zhigang Ji; Weidong Zhang 002; John S. Marsland; Thomas Chiarella; Jacopo Franco; Ben Kaczer; Dimitri Linten; Jianfu Zhang 001 (IEEE Access, 2023)

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. - J. P. Bastos; Barry J. O'Sullivan; Yusuke Higashi; Adrian Vaisman Chasin; Jacopo Franco; Hiroaki Arimura; J. Ganguly; Elena Capogreco; Alessio Spessot; N. Horiguchi (IRPS, 2024)

Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. - Y. Guo; Robin Degraeve; Michiel Vandemaele; Pablo Saraza-Canflanca; Jacopo Franco; Ben Kaczer; Erik Bury; Ingrid Verbauwhede (IRPS, 2024)

DC Reliability Study of $ text{high}- kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. - Barry J. O'Sullivan; AliReza Alian; Arturo Sibaja Hernandez; Jacopo Franco; Sachin Yadav 001; Hao Yu; Aarti Rathi; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2024)

Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. - Pietro Rinaudo; Adrian Vaisman Chasin; Ying Zhao; Ben Kaczer; Nouredine Rassoul; Harold Dekkers; Michiel J. van Setten; Attilio Belmonte; Ingrid De Wolf; Gouri Sankar Kar; Jacopo Franco (IRPS, 2024)

SILC and TDDB reliability of novel low thermal budget RMG gate stacks. - Andrea Vici; Robin Degraeve; Naoto Horiguchi; Ingrid De Wolf; Jacopo Franco (IRPS, 2024)

Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. - Ying Zhao; Pietro Rinaudo; Adrian Vaisman Chasin; Brecht Truijen; Ben Kaczer; Nouredine Rassoul; Harold Dekkers; Attilio Belmonte; Ingrid De Wolf; Gouri Sankar Kar; Jacopo Franco (IRPS, 2024)

Vt Fine-Tuning in Multi-Vt Gate-All-Around Nanosheet nFETs Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET Integration. - Hiroaki Arimura; Hans Mertens; Jacopo Franco; L. Lukose; W. Maqsood; S. Brus; Thomas Chiarella; A. Impagnatiello; S. Homkar; V. K. Mootheri; C. Yin; G. Alessio Verni; et al. (VLSI Technology and Circuits, 2024)

Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs. - R. Asanovski; Hiroaki Arimura; J. Ganguly; Pierpaolo Palestri; Alexander Grill; Ben Kaczer; Naoto Horiguchi; Luca Selmi; Jacopo Franco (IRPS, 2025)

Gate Stack Development for Next Gen High Voltage Periphery DRAM Devices. - J. P. Bastos; Jacopo Franco; Barry J. O'Sullivan; Yusuke Higashi; Adrian Chasin; J. Ganguly; Hiroaki Arimura; Alessio Spessot; M.-S. Kim; N. Horiguchi (IRPS, 2025)

Reliability Study of La- and Al-Doped ZrO2 Dielectrics for High Density MIMCAP Applications. - Emmanuel Chery; Lucie Sourgen; Jacopo Franco; Mihaela Ioana Popovici; Eric Beyne (IRPS, 2025)

Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. - Yusuke Higashi; Anirudh Varanasi; Philippe J. Roussel; Pablo Saraza-Canflanca; J. P. Bastos; Alexander Grill; E. Catapano; R. Asanovski; Jacopo Franco; Ben Kaczer; Adrian Chasin; Devin Verreck; et al. (IRPS, 2025)

TDDB Reliability Improvement of Low Thermal Budget RMG Stacks. - G. Molinaro; Hiroaki Arimura; S. Sacchi; Andrea Vici; Robin Degraeve; Ben Kaczer; Naoto Horiguchi; M. Houssa; Jacopo Franco (IRPS, 2025)