A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency. - Ki-Whan Song; Jinyoung Kim; Jae-Man Yoon; Sua Kim; Huijung Kim; Hyun-Woo Chung; Hyungi Kim; Kanguk Kim; Hwan-Wook Park; Hyun Chul Kang; Nam-Kyun Tak; Dukha Park; et al. (IEEE J. Solid State Circuits, 2010)