40-Gb/s circuits built from a 120-GHz fT SiGe technology. - Greg G. Freeman; Mounir Meghelli; Young Kwark; Steven Zier; Alexander V. Rylyakov; Michael Sorna; Todd Tanji; Oswin M. Schreiber; Keith Walter; Jae-Sung Rieh; Basanth Jagannathan; Alvin J. Joseph; et al. (IEEE J. Solid State Circuits, 2002)

Foundation of rf CMOS and SiGe BiCMOS technologies. - James S. Dunn; David C. Ahlgren; Douglas D. Coolbaugh; Natalie B. Feilchenfeld; Greg G. Freeman; David R. Greenberg; Robert A. Groves; Fernando J. Guarín; Youssef Hammad; Alvin J. Joseph; Louis D. Lanzerotti; Stephen A. St. Onge; et al. (IBM J. Res. Dev., 2003)

Product applications and technology directions with SiGe BiCMOS. - Alvin J. Joseph; James S. Dunn; Greg G. Freeman; David L. Harame; Douglas Coolbaugh; Robert A. Groves; Kenneth J. Stein; Rich Volant; Seshadri Subbanna; V. S. Marangos; Stephen St. Onge; Ebenezer Eshun; et al. (IEEE J. Solid State Circuits, 2003)

Reliability and performance scaling of very high speed SiGe HBTs. - Greg G. Freeman; Jae-Sung Rieh; Zhijian Yang; Fernando J. Guarín (Microelectron. Reliab., 2004)

Scaling of SiGe Heterojunction Bipolar Transistors. - Jae-Sung Rieh; David R. Greenberg; Andreas Stricker; Greg G. Freeman (Proc. IEEE, 2005)

A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology. - Seungwoo Seo; Jae-Sung Rieh (IEICE Trans. Electron., 2010)

A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills. - Sungjin Kim; Hyunchul Kim; Dong-Hyun Kim; Sanggeun Jeon; Yeocho Yoon; Jae-Sung Rieh (IEICE Trans. Electron., 2011)

Recent progress in terahertz monolithic integrated circuits. - Moonil Kim; Jae-Sung Rieh; Sanggeun Jeon (ISCAS, 2012)

Si-based D-band frequency conversion circuits. - Dong-Hyun Kim; Jongwon Yun; Jae-Sung Rieh (ISOCC, 2012)

The Effect of Device Layout Schemes on RF Performance of Multi-Finger MOSFETs. - Yongho Oh; Jae-Sung Rieh (IEICE Trans. Electron., 2012)

Bulk acoustic wave resonator with suppressed energy loss using improved lateral structure. - Jea-Shik Shin; Insang Song; Moon-Chul Lee; Chul-Soo Kim; Sang Uk Son; Duck-Hwan Kim; Ho-Soo Park; Jing Cui; Yujie Ai; Sungwoo Hwang; Jae-Sung Rieh (IEICE Electron. Express, 2014)

A Triple-Push Voltage Controlled Oscillator in 0.13-µm RFCMOS Technology Operating Near 177GHz. - Namhyung Kim; Kyungmin Kim; Jae-Sung Rieh (IEICE Trans. Electron., 2014)

D2ART: Direct Data Accessing from Passive RFID Tag for infra-less, contact-less, and battery-less pervasive computing. - Joon Goo Lee; Seon Wook Kim; Dong-Hyun Kim; Younga Cho; Jae-Sung Rieh; Gyusung Kang; Jongsun Park 001; Hokyu Lee; Sejin Park; Chulwoo Kim (Microprocess. Microsystems, 2015)

WR-3 Band Integrated Circuits in InP HBT Technology. - Sanggeun Jeon; Jae-Sung Rieh; Moonil Kim (ISCAS, 2019)

A 253-280 GHz Wide Tuning Range VCO with -3.5 dBm Peak Output Power in 40-nm CMOS. - Surajit Kumar Nath; Junghwan Yoo; Jae-Sung Rieh; Daekeun Yoon (ESSCIRC, 2021)

A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range. - Sooyeon Kim; Daekeun Yoon; Jungsoo Kim; Junghwan Yoo; Kiryong Song; Jae-Sung Rieh (IEEE Trans. Circuits Syst. II Express Briefs, 2022)