3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss. - Jaeyeop Na; Kwansoo Kim (ICEIC, 2022)

High Performance 3.3KV 4H-SiC MOSFET with a Floating Island and Hetero Junction Diode. - Jaeyeop Na; Kwansoo Kim (ICEIC, 2023)