Jaihyuk Song

According to our database1, Jaihyuk Song authored at least 14 papers between 2023 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2025
AI Revolution Driven by Memory Technology Innovation.
Proceedings of the IEEE International Solid-State Circuits Conference, 2025

6.1 A 3-Stacked Hybrid-Shutter CMOS Image Sensor with Switchable 1.2µm -Pitch 50Mpixel Rolling Shutter and 2.4µm -Pitch 12.5Mpixel Global Shutter Modes for Mobile Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2025

A Study on the Origin of Dynamic Charge Loss of Next Generation DRAM Cell Array Transistor.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Future Technology Outlook on DRAM/Flash Memories for More Moore and More Than Moore.
Proceedings of the IEEE International Memory Workshop, 2025

2024
Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Cell to Core-Periphery Overlap (C2O) Based on BCAT for Next Generation DRAM.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

A Metal Dual Work-Function Gate (MDWG) for the Continuous Scaling of DRAM Cell Transistors.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Expanding Design Technology Co-Optimization Potentials with Back-Side Interconnect Innovation.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024



A Novel Quantitative Model for Combination Effects of Hydrogen and Process Heat on Peripheral Transistors in 3D-NAND Flash Memory.
Proceedings of the IEEE International Reliability Physics Symposium, 2024


2023
Trends and Future Challenges of 3D NAND Flash Memory.
Proceedings of the IEEE International Memory Workshop, 2023

Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND.
Proceedings of the IEEE International Memory Workshop, 2023


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