Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors. - Marko J. Tadjer; Travis J. Anderson; James C. Gallagher; Peter E. Raad; Pavel L. Komarov; Andrew D. Koehler; Karl D. Hobart; Fritz J. Kub (DRC, 2018)

Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES). - Shamima Afroz; Virginia Wheeler; Marko J. Tadjer; James C. Gallagher; Geoffrey Foster; Karl D. Hobart; Brian Novak; Ken A. Nagamatsu; Kevin Frey; Patrick Shea; Rob Howell; Josephine Chang; et al. (BCICTS, 2019)

AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. - James Spencer Lundh; Hannah N. Masten; Kohei Sasaki; Alan G. Jacobs; Zhe Cheng; Joseph Spencer; Lei Chen; James C. Gallagher; Andrew D. Koehler; Keita Konishi; Samuel Graham; Akito Kuramata; et al. (DRC, 2022)