Reliability limits for the gate insulator in CMOS technology. - James H. Stathis (IBM J. Res. Dev., 2002)

Dependence of Post-Breakdown Conduction on Gate Oxide Thickness. - Salvatore Lombardo; James H. Stathis; Barry P. Linder (Microelectron. Reliab., 2002)

Analysis of the effect of the gate oxide breakdown on SRAM stability. - Rosana Rodríguez; James H. Stathis; Barry P. Linder; Steven P. Kowalczyk; Ching-Te Chuang; Rajiv V. Joshi; Gregory A. Northrop; Kerry Bernstein; Azeez J. Bhavnagarwala; Salvatore Lombardo (Microelectron. Reliab., 2002)

Influence and model of gate oxide breakdown on CMOS inverters. - Rosana Rodríguez; James H. Stathis; Barry P. Linder; Rajiv V. Joshi; Ching-Te Chuang (Microelectron. Reliab., 2003)

Reliability of ultra-thin oxides in CMOS circuits. - James H. Stathis; Barry P. Linder; Rosana Rodríguez; Salvatore Lombardo (Microelectron. Reliab., 2003)

Circuit implications of gate oxide breakdown. - James H. Stathis; Rosana Rodríguez; Barry P. Linder (Microelectron. Reliab., 2003)

The negative bias temperature instability in MOS devices: A review. - James H. Stathis; Sufi Zafar (Microelectron. Reliab., 2006)

Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions. - Esteve Amat; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; James H. Stathis (Microelectron. Reliab., 2007)

Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. - Javier Martín-Martínez; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; James H. Stathis (Microelectron. Reliab., 2007)

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. - R. Pagano; Salvatore Lombardo; Felix Palumbo; Paul Kirsch; S. A. Krishnan; Chadwin D. Young; Rino Choi; Gennadi Bersuker; James H. Stathis (Microelectron. Reliab., 2008)

Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability. - Aditya Bansal; Rahul M. Rao; Jae-Joon Kim; Sufi Zafar; James H. Stathis; Ching-Te Chuang (Microelectron. Reliab., 2009)

Reliability of advanced high-k/metal-gate n-FET devices. - James H. Stathis; M. Wang; K. Zhao (Microelectron. Reliab., 2010)

The resilience wall: Cross-layer solution strategies. - Subhasish Mitra; Pradip Bose; Eric Cheng; Chen-Yong Cher; Hyungmin Cho; Rajiv V. Joshi; Young Moon Kim; Charles R. Lefurgy; Yanjing Li; Kenneth P. Rodbell; Kevin Skadron; James H. Stathis; et al. (VLSI-DAT, 2014)

Analyzing path delays for accelerated testing of logic chips. - Emily Ray; Barry P. Linder; Raphael Robertazzi; Kevin Stawiasz; Alan J. Weger; Emmanuel Yashchin; James H. Stathis; Peilin Song (IRPS, 2015)

Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET. - Miaomiao Wang 006; Zuoguang Liu; Tenko Yamashita; James H. Stathis; Chia-Yu Chen (IRPS, 2015)

A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL). - Ernest Y. Wu; James H. Stathis; Baozhen Li; Barry P. Linder; Kai Zhao; Griselda Bonilla (IRPS, 2015)

Hot carrier reliability in ultra-scaled sige channel p-FinFETs. - Miaomiao Wang 006; Xin Miao; James H. Stathis; Richard G. Southwick (ASICON, 2017)

The physics of NBTI: What do we really know? - James H. Stathis (IRPS, 2018)

Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics. - Miaomiao Wang 006; Richard G. Southwick; Kangguo Cheng; James H. Stathis (IRPS, 2018)

Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications. - Ernest Y. Wu; Andrew Kim; Baozhen Li; James H. Stathis (IRPS, 2018)

Controversial issues in negative bias temperature instability. - James H. Stathis; Souvik Mahapatra; Tibor Grasser (Microelectron. Reliab., 2018)

Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery. - Elnatan Mataev; James H. Stathis; Giuseppe La Rosa; Barry P. Linder (IRPS, 2019)

On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs. - Narendra Parihar; Uma Sharma; Richard G. Southwick; Miaomiao Wang 006; James H. Stathis; Souvik Mahapatra (IRPS, 2019)

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. - Miaomiao Wang 006; Jingyun Zhang; Huimei Zhou; Richard G. Southwick; Robin Hsin Kuo Chao; Xin Miao; Veeraraghavan S. Basker; Tenko Yamashita; Dechao Guo; Gauri Karve; Huiming Bu; James H. Stathis (IRPS, 2019)

Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications. - Ernest Y. Wu; Baozhen Li; James H. Stathis; Andrew Kim (IRPS, 2019)