Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. - James P. Ashton; Patrick M. Lenahan; Daniel J. Lichtenwalner; Aivars J. Lelis; Mark A. Anders 002 (IRPS, 2019)

Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. - James P. Ashton; Patrick M. Lenahan; Daniel J. Lichtenwalner; Aivars J. Lelis (IRPS, 2020)

Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics. - Patrick M. Lenahan; E. B. Frantz; Sean W. King; Mark A. Anders 002; S. J. Moxim; James P. Ashton; Kyle J. Myers; M. E. Flatté; N. J. Harmon (IRPS, 2023)