Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs. - Seshadri Subbanna; Lawrence Larson; Greg G. Freeman; David Ahlgren; Kenneth J. Stein; Carl E. Dickey; James Mecke; A. Rincon; P. Bacon; Robert A. Groves; Mehmet Soyuer; David L. Harame; et al. (CICC, 2001)

Foundation of rf CMOS and SiGe BiCMOS technologies. - James S. Dunn; David C. Ahlgren; Douglas D. Coolbaugh; Natalie B. Feilchenfeld; Greg G. Freeman; David R. Greenberg; Robert A. Groves; Fernando J. Guarín; Youssef Hammad; Alvin J. Joseph; Louis D. Lanzerotti; Stephen A. St. Onge; et al. (IBM J. Res. Dev., 2003)

Product applications and technology directions with SiGe BiCMOS. - Alvin J. Joseph; James S. Dunn; Greg G. Freeman; David L. Harame; Douglas Coolbaugh; Robert A. Groves; Kenneth J. Stein; Rich Volant; Seshadri Subbanna; V. S. Marangos; Stephen St. Onge; Ebenezer Eshun; et al. (IEEE J. Solid State Circuits, 2003)

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS. - Alvin J. Joseph; David L. Harame; Basanth Jagannathan; Douglas D. Coolbaugh; David C. Ahlgren; John Magerlein; Louis D. Lanzerotti; Natalie B. Feilchenfeld; Stephen A. St. Onge; James S. Dunn; Edward J. Nowak (Proc. IEEE, 2005)

SiGe BiCMOS Trends - Today and Tomorrow. - James S. Dunn; David L. Harame; Alvin J. Joseph; Stephen A. St. Onge; Natalie B. Feilchenfeld; Louis D. Lanzerotti; Bradley A. Orner; Ephrem G. Gebreselasie; Jeffrey B. Johnson; Douglas D. Coolbaugh; Rick Rassel; Marwan Khater (CICC, 2006)

Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications. - Alvin J. Joseph; John D. Gillis; Mark Doherty; Peter J. Lindgren; Rosemary A. Previti-Kelly; Ramana M. Malladi; Ping-Chuan Wang; Mete Erturk; Hanyi Ding; Ephrem G. Gebreselasie; Michael J. McPartlin; James S. Dunn (IBM J. Res. Dev., 2008)