17.1 A 0.6V 1.5GHz 84Mb SRAM design in 14nm FinFET CMOS technology. - Eric Karl; Zheng Guo; James W. Conary; Jeffrey L. Miller; Yong-Gee Ng; Satyanand Nalam; Daeyeon Kim; John Keane 001; Uddalak Bhattacharya; Kevin Zhang 001 (ISSCC, 2015)

A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS Technology With Capacitive Charge-Sharing Write Assist Circuitry. - Eric Karl; Zheng Guo; James W. Conary; Jeffrey L. Miller; Yong-Gee Ng; Satyanand Nalam; Daeyeon Kim; John Keane 001; Xiaofei Wang; Uddalak Bhattacharya; Kevin Zhang 001 (IEEE J. Solid State Circuits, 2016)