A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off. - Melina Apostolidou; Mark P. van der Heijden; Domine M. W. Leenaerts; Jan Sonsky; Anco Heringa; Iouri Volokhine (IEEE J. Solid State Circuits, 2009)

A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz. - David A. Calvillo-Cortes; Mustafa Acar; Mark P. van der Heijden; Melina Apostolidou; Leo C. N. de Vreede; Domine Leenaerts; Jan Sonsky (ISSCC, 2011)

The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations. - Giorgia Longobardi; Florin Udrea; Stephen Sque; Jeroen Croon; Fred Hurkx; Jan Sonsky (ESSDERC, 2014)