Novel level-identifying circuit for flash multilevel memories. - Donato Montanari; Jan Van Houdt; Guido Groeseneken; Herman E. Maes (IEEE J. Solid State Circuits, 1998)

A flash memory technology with quasi-virtual ground array for low-cost embedded applications. - Jorgo Tsouhlarakis; Guido Vanhorebeek; Geert Verhoeven; Jan De Blauwe; Shiho Kim; Dirk Wellekens; Paul Hendrickx; Luc Haspeslagh; Jan Van Houdt; Herman Maes (IEEE J. Solid State Circuits, 2001)

Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles. - M. Lorenzini; Luc Haspeslagh; Jan Van Houdt; Herman E. Maes (VLSI Design, 2001)

The HIMOS flash technology: the alternative solution for low-cost embedded memory. - Jan Van Houdt; Dirk Wellekens; Luc Haspeslagh (Proc. IEEE, 2003)

Distribution and generation of traps in SiO2/Al2O3 gate stacks. - Isodiana Crupi; Robin Degraeve; Bogdan Govoreanu; David P. Brunco; Philippe Roussel; Jan Van Houdt (Microelectron. Reliab., 2007)

Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique. - Giuseppina Puzzilli; Bogdan Govoreanu; Fernanda Irrera; Maarten Rosmeulen; Jan Van Houdt (Microelectron. Reliab., 2007)

Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness. - Pavel Poliakov; Pieter Blomme; Miguel Corbalan; Jan Van Houdt; Wim Dehaene (Microelectron. Reliab., 2011)

Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories. - Pavel Poliakov; Pieter Blomme; Alessandro Vaglio Pret; Miguel Corbalan Miranda; Roel Gronheid; Diederik Verkest; Jan Van Houdt; Wim Dehaene (Microelectron. Reliab., 2012)

Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. - Lifang Liu; Antonio Arreghini; Geert Van den Bosch; Liyang Pan; Jan Van Houdt (Microelectron. Reliab., 2014)

Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations. - Baojun Tang; Weidong Zhang 002; Laurent Breuil; Colin Robinson; Yunqi Wang; Maria Toledano-Luque; Geert Van den Bosch; Jianfu Zhang 001; Jan Van Houdt (Microelectron. Reliab., 2014)

Doped GeSe materials for selector applications. - Naga Sruti Avasarala; Bogdan Govoreanu; Karl Opsomer; Wouter Devulder; Sergiu Clima; Christophe Detavernier; Marleen van der Veen; Jan Van Houdt; Marc Henys; Ludovic Goux; Gouri Sankar Kar (ESSDERC, 2017)

From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration. - Karine Florent; Simone Lavizzari; Luca Di Piazza; Mihaela Ioana Popovici; Goedele Potoms; Tom Raymaekers; Guido Groeseneken; Jan Van Houdt (ESSDERC, 2017)

Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. - Karine Florent; A. Subirats; Simone Lavizzari; Robin Degraeve; Umberto Celano; Ben Kaczer; Luca Di Piazza; Mihaela Ioana Popovici; Guido Groeseneken; Jan Van Houdt (IRPS, 2018)

New Insights into the Imprint Effect in FE-HfO2 and its Recovery. - Yusuke Higashi; Karine Florent; A. Subirats; Ben Kaczer; Luca Di Piazza; Sergiu Clima; Nicolo Ronchi; Sean R. C. McMitchell; Kaustuv Banerjee; Umberto Celano; Masamichi Suzuki; Dimitri Linten; et al. (IRPS, 2019)

Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. - Konrad Seidel; Kati Biedermann; Jan Van Houdt; Tarek Ali; Raik Hoffmann; Kati Kühnel; Malte Czernohorsky; Matthias Rudolph; Björn Pätzold; Philipp Steinke; K. Zimmermann (NVMTS, 2019)

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. - Tarek Ali; Kati Kühnel; Malte Czernohorsky; Matthias Rudolph; Björn Pätzold; Ricardo Olivo; David Lehninger; Konstantin Mertens; Franz Müller 001; Maximilian Lederer; Raik Hoffmann; Clemens Mart; et al. (IRPS, 2020)

First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. - K. Banerjee; Laurent Breuil; A. P. Milenin; M. Pak; J. Stiers; Sean R. C. McMitchell; L. Di Piazza; Geert Van den Bosch; Jan Van Houdt (IMW, 2021)

Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. - K. Kaczmarek; Marie Garcia Bardon; Y. Xiang; Laurent Breuil; Nicolo Ronchi; Bertrand Parvais; Guido Groeseneken; Jan Van Houdt (IMW, 2021)

Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. - Taras Ravsher; Shamin H. Sharifi; Andrea Fantini; Hubert Hody; Thomas Witters; Daniele Garbin; Robin Degraeve; Valeri Afanas'ev; Jan Van Houdt; Ludovic Goux; D. Crotti; Gouri Sankar Kar (IMW, 2021)

Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. - Anastasiia Kruv; Sean R. C. McMitchell; Sergiu Clima; Oguzhan O. Okudur; Nicolo Ronchi; Geert Van den Bosch; Mario Gonzalez; Ingrid De Wolf; Jan Van Houdt (IRPS, 2021)

Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications. - Daisuke Saito; Toshiyuki Kobayashi; Hiroki Koga; Nicolo Ronchi; Kaustuv Banerjee; Yusuke Shuto; Jun Okuno; Kenta Konishi; Luca Di Piazza; Arindam Mallik; Jan Van Houdt; Masanori Tsukamoto; et al. (VLSI Circuits, 2021)

A comprehensive variability study of doped HfO2 FeFET for memory applications. - Nicolo Ronchi; Lars-Åke Ragnarsson; Umberto Celano; Ben Kaczer; K. Kaczmarek; K. Banerjee; Sean R. C. McMitchell; Geert Van den Bosch; Jan Van Houdt (IMW, 2022)

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. - Barry J. O'Sullivan; Brecht Truijen; Vamsi Putcha; Alexander Grill; Adrian Vaisman Chasin; Geert Van den Bosch; Ben Kaczer; Md Nur K. Alam; Jan Van Houdt (IRPS, 2022)

Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. - Taras Ravsher; Andrea Fantini; Adrian Vaisman Chasin; Shamin H. Sharifi; Hubert Hody; Harold Dekkers; Thomas Witters; Jan Van Houdt; Valeri Afanas'ev; Sebastien Couet; Gouri Sankar Kar (IRPS, 2022)

Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. - Brecht Truijen; Barry J. O'Sullivan; Md. Nurul Alam; Dieter Claes; Mischa Thesberg; Philippe Roussel; Adrian Vaisman Chasin; Geert Van den Bosch; Ben Kaczer; Jan Van Houdt (IRPS, 2022)

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. - Md Nur K. Alam; Yusuke Higashi; Brecht Truijen; Ben Kaczer; Mihaela Ioana Popovici; Bj O'Sullivan; Philippe Roussel; Robin Degraeve; Marc M. Heyns; Jan Van Houdt (VLSI Technology and Circuits, 2022)

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode. - Taras Ravsher; Daniele Garbin; Andrea Fantini; Robin Degraeve; Sergiu Clima; Gabriele Luca Donadio; Shreya Kundu; Hubert Hody; Wouter Devulder; Jan Van Houdt; Valeri Afanas'ev; Romain Delhougne; et al. (VLSI Technology and Circuits, 2022)

Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconate. - Mihaela Ioana Popovici; Jasper Bizindavyi; Gourab De; Dae Seon Kwon; Gouri Sankar Kar; Jan Van Houdt (ESSDERC, 2023)

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. - Laurent Breuil; Mihaela Ioana Popovici; J. Stiers; Antonio Arreghini; S. Ramesh 005; Geert Van den Bosch; Jan Van Houdt; Maarten Rosmeulen (IMW, 2023)

Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. - Zhuo Chen; Nicolo Ronchi; Amey Walke; Kaustuv Banerjee; Mihaela Ioana Popovici; Kostantine Katcko; Geert Van den Bosch; Maarten Rosmeulen; Valeri Afanas'ev; Jan Van Houdt (IMW, 2023)

Evaluating the Effects of FeFET Device Variability on Charge Sharing Based AiMC Accelerator. - Swatilekha Majumdar; Stefan Cosemans; Arindam Mallik; Peter Debacker; Francky Catthoor; Jan Van Houdt (ISCAS, 2023)

Gate Side Injection Operating Mode for 3D NAND Flash Memories. - Laurent Breuil; R. Izmailov; Mihaela Ioana Popovici; J. Stiers; Antonio Arreghini; S. Ramesh; Geert Van den Bosch; Jan Van Houdt; Maarten Rosmeulen (IMW, 2024)

Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification. - Taras Ravsher; Andrea Fantini; Kruti Trivedi; Nouredine Rassoul; Harold Dekkers; Attilio Belmonte; Jan Van Houdt; Valeri Afanas'ev; Kurt Wostyn; Sebastien Couet; Gouri Sankar Kar (IMW, 2024)

Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. - Taras Ravsher; Robin Degraeve; Daniele Garbin; Sergiu Clima; Andrea Fantini; Gabriele Luca Donadio; Shreya Kundu; Wouter Devulder; Hubert Hody; Goedele Potoms; Jan Van Houdt; Valeri Afanas'ev; et al. (IRPS, 2024)

Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics. - Md Nur K. Alam; Sergiu Clima; Ben Kaczer; Philippe Roussel; Brecht Truijen; Lars-Åke Ragnarsson; N. Horiguchi; Marc M. Heyns; Jan Van Houdt (CoRR, 2024)