Advanced Local Lifetime Control for Higher Reliability of Power Devices. - J. Vobecký; Pavel Hazdra (Microelectron. Reliab., 2003)

Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode. - J. Vobecký; Pavel Hazdra; V. Záhlava (Microelectron. Reliab., 2003)

Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons. - Pavel Hazdra; Jan Vobecký; H. Dorschner; K. Brand (Microelectron. J., 2004)

Reliability of Contacts for Press-Pack High-Power Devices. - J. Vobecký; D. Kolesnikov (Microelectron. Reliab., 2005)

The properties of aluminum, platinum silicide and copper based contacts for silicon high-power devices. - J. Vobecký; D. Kolesnikov (Microelectron. J., 2006)

Dynamic avalanche in diodes with local lifetime control by means of palladium. - J. Vobecký; Pavel Hazdra (Microelectron. J., 2008)

Doping compensation for increased robustness of fast recovery silicon diodes. - J. Vobecký; V. Záhlava; V. Komarnitskyy (Microelectron. Reliab., 2010)

Molybdenum and low-temperature annealing of a silicon power P-i-N diode. - J. Vobecký; V. Komarnitskyy; V. Záhlava (Microelectron. Reliab., 2011)

High-power silicon P-i-N diode with cathode shorts: The impact of electron irradiation. - Libor Pína; Jan Vobecký (Microelectron. Reliab., 2013)

Parameters influencing the maximum controllable current in gate commutated thyristors. - Neophytos Lophitis; Marina Antoniou; Florin Udrea; Iulian Nistor; Martin Arnold; Tobias Wikström; Jan Vobecký (IET Circuits Devices Syst., 2014)

Programmable mask design for Phase Controlled Thyristors with automated short positioning. - Marco Bellini; Jan Vobecký (IECON, 2015)

TCAD study of DLC coatings for large-area high-power diodes. - Susanna Reggiani; Luigi Balestra; Antonio Gnudi; Elena Gnani; Giorgio Baccarani; J. Dobrzynska; J. Vobecký; C. Tosi (Microelectron. Reliab., 2018)