Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage. - Wenjian Liu; Islam Sayed; Brian Romanczyk; Nirupam Hatui; Jana Georgieva; Haoran Li; Stacia Keller; Umesh K. Mishra (DRC, 2020)

Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications. - Dan Denninghoff; F. Erdem Arkun; Jeong-Sun Moon; Haidang Tran; Andrea L. Corrion; Georges Siddiqi; David Fanning; Micha Fireman; J. Tai; Joel Wong; Bob Grabar; C. Dao; et al. (BCICTS, 2023)

W-band GaN Resistive FET I-Q Mixer MMICs with Low Conversion Loss. - Daniel Kuzmenko; Harris Moyer; Jana Georgieva; Tai Haw; Stephen A. Maas (BCICTS, 2024)