Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics. - Jangseop Lee; Seonghun Kim; Sangmin Lee; Sanghyun Ban; Seongjae Heo; Donghwa Lee; Oleksandr Mosendz; Hyunsang Hwang (VLSI Technology and Circuits, 2022)

Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications. - Sanghyun Ban; Jangseop Lee; Taehoon Kim; Hyunsang Hwang (VLSI Technology and Circuits, 2023)