Circuit-aware device reliability criteria methodology. - Jason T. Ryan; Lan Wei; Jason P. Campbell; Ricki G. Southwick; Kin P. Cheung; Anthony S. Oates; H.-S. Philip Wong; John Suehle (ESSCIRC, 2011)

Non-tunneling origin of the 1/f noise in SiC MOSFET. - Kin P. Cheung; Jason P. Campbell (ICICDT, 2018)

Switching Variability Factors in Compliance-Free Metal Oxide RRAM. - Dmitry Veksler; Gennadi Bersuker; Adam W. Bushmaker; P. R. Shrestha; Kin P. Cheung; Jason P. Campbell (IRPS, 2019)

Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. - Dmitry Veksler; Gennadi Bersuker; Adam W. Bushmaker; Maribeth Mason; P. R. Shrestha; Kin P. Cheung; Jason P. Campbell; Thomas Rueckes; Lee Cleveland; Harry Luan; David C. Gilmer (IRPS, 2020)

A 0.16-3.7GHz Ultra-Compact Noise-Canceling Cryogenic Low-Noise Amplifier at 4 K using 16nm FinFET Technology for Qubit Readout. - Runzhou Chen; Hamdi Mani; Phil Marsh; Richard Al Hadi; Pragya Shrestha; Jason P. Campbell; Christopher Chen; Hao-Yu Chien; Mau-Chung Frank Chang (DRC, 2024)