Evanescent mode based compact modelling of a dual-metal double-gate tunnel field-effect transistor. - Ria Bose; Jatindra Nath Roy (IET Circuits Devices Syst., 2020)

Analytical model and simulation-based analysis of a work function engineered triple metal tunnel field-effect transistor device showing excellent device performance. - Ria Bose; Jatindra Nath Roy (IET Circuits Devices Syst., 2021)