13.4 A 22nm 1Mb 1024b-Read and Near-Memory-Computing Dual-Mode STT-MRAM Macro with 42.6GB/s Read Bandwidth for Security-Aware Mobile Devices. - Tung-Cheng Chang; Yen-Cheng Chiu; Chun-Ying Lee; Je-Min Hung; Kuang-Tang Chang; Cheng-Xin Xue; Ssu-Yen Wu; Hui-Yao Kao; Peng Chen; Hsiao-Yu Huang; Shih-Hsih Teng; Meng-Fan Chang (ISSCC, 2020)

A 4-Kb 1-to-8-bit Configurable 6T SRAM-Based Computation-in-Memory Unit-Macro for CNN-Based AI Edge Processors. - Yen-Cheng Chiu; Zhixiao Zhang; Jia-Jing Chen; Xin Si; Ruhui Liu; Yung-Ning Tu; Jian-Wei Su; Wei-Hsing Huang; Jing-Hong Wang; Wei-Chen Wei; Je-Min Hung; Shyh-Shyuan Sheu; et al. (IEEE J. Solid State Circuits, 2020)

A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices. - Cheng-Xin Xue; Je-Min Hung; Hui-Yao Kao; Yen-Hsiang Huang; Sheng-Po Huang; Fu-Chun Chang; Peng Chen; Ta-Wei Liu; Chuan-Jia Jhang; Chin-I Su; Win-San Khwa; Chung-Chuan Lo; et al. (ISSCC, 2021)

Challenges and Trends of SRAM-Based Computing-In-Memory for AI Edge Devices. - Chuan-Jia Jhang; Cheng-Xin Xue; Je-Min Hung; Fu-Chun Chang; Meng-Fan Chang (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices. - Je-Min Hung; Yen-Hsiang Huang; Sheng-Po Huang; Fu-Chun Chang; Tai-Hao Wen; Chin-I Su; Win-San Khwa; Chung-Chuan Lo; Ren-Shuo Liu; Chih-Cheng Hsieh; Kea-Tiong Tang; Yu-Der Chih; et al. (ISSCC, 2022)

A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device. - Yen-Cheng Chiu; Tung-Cheng Chang; Chun-Ying Lee; Je-Min Hung; Kuang-Tang Chang; Cheng-Xin Xue; Ssu-Yen Wu; Hui-Yao Kao; Peng Chen; Hsiao-Yu Huang; Shih-Hsih Teng; Chieh-Pu Lo; et al. (IEEE J. Solid State Circuits, 2022)

A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W. - Wei-Hsing Huang; Tai-Hao Wen; Je-Min Hung; Win-San Khwa; Yun-Chen Lo; Chuan-Jia Jhang; Hung-Hsi Hsu; Yu-Hsiang Chin; Yu-Chiao Chen; Chuna-Chuan Lo; Ren-Shuo Liu; Kea-Tiong Tang; et al. (ISSCC, 2023)

A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices. - Tai-Hao Wen; Je-Min Hung; Hung-Hsi Hsu; Yuan Wu 009; Fu-Chun Chang; Chung-Yuan Li; Chih-Han Chien; Chin-I Su; Win-San Khwa; Jui-Jen Wu; Chung-Chuan Lo; Ren-Shuo Liu; et al. (VLSI Technology and Circuits, 2023)

8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices. - Je-Min Hung; Tai-Hao Wen; Yen-Hsiang Huang; Sheng-Po Huang; Fu-Chun Chang; Chin-I Su; Win-San Khwa; Chung-Chuan Lo; Ren-Shuo Liu; Chih-Cheng Hsieh; Kea-Tiong Tang; Yu-Der Chih; et al. (IEEE J. Solid State Circuits, 2023)