Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. - Quentin Hubert; Carine Jahan; Alain Toffoli; Gabriele Navarro; S. Chandrashekar; Pierre Noe; Veronique Sousa; Luca Perniola; J.-F. Nodin; A. Persico; S. Maitrejean; A. Roule; et al. (ESSDERC, 2012)

High temperature reliability of μtrench Phase-Change Memory devices. - Gabriele Navarro; Sarra Souiki; Alain Persico; Veronique Sousa; Jean-François Nodin; Carine Jahan; François Aussenac; Vincent Delaye; Olga Cueto; Luca Perniola; Barbara De Salvo (Microelectron. Reliab., 2012)

On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. - Boubacar Traore; Elisa Vianello; Gabriel Molas; Marc Gely; Jean-François Nodin; Eric Jalaguier; Philippe Blaise; Barbara De Salvo; Leonardo R. C. Fonseca; Kanhao Xue; Yoshio Nishi (ESSDERC, 2013)

Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design. - Elisa Vianello; Olivier Thomas; M. Harrand; Santhosh Onkaraiah; T. Cabout; Boubacar Traore; T. Diokh; Houcine Oucheikh; Luca Perniola; Gabriel Molas; Philippe Blaise; J.-F. Nodin; et al. (ICICDT, 2013)

Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications. - Gilbert Sassine; Cecile Nail; Luc Tillie; Diego Alfaro Robayo; Alexandre Levisse; Carlo Cagli; Khalil El Hajjam; Jean-Francois Nodin; Elisa Vianello; Mathieu Bernard; Gabriel Molas; Etienne Nowak (IRPS, 2018)

Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device. - Amir Regev; Alessandro Bricalli; Giuseppe Piccolboni; Alexandre Valentian; Thomas Mesquida; Gabriel Molas; Jean-François Nodin (AICAS, 2020)

A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification. - Wolfgang Goes; D. Green; Philippe Blaise; Giuseppe Piccolboni; Alessandro Bricalli; Amir Regev; Gabriel Molas; Jean-Francois Nodin (IMW, 2021)

High temperature stability embedded ReRAM for 2x nm node and beyond. - Gabriel Molas; Giuseppe Piccolboni; Alessandro Bricalli; Anthonin Verdy; I. Naot; Y. Cohen; Amir Regev; I. Naveh; Damien Deleruyelle; Quentin Rafhay; Niccolo Castellani; Lucas Reganaz; et al. (IMW, 2022)

Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations. - Eduardo Esmanhotto; Tifenn Hirtzlin; Niccolo Castellani; S. Martin; Bastien Giraud; François Andrieu; Jean-François Nodin; Damien Querlioz; Jean-Michel Portal; Elisa Vianello (IRPS, 2022)

A High Throughput Generative Vector Autoregression Model for Stochastic Synapses. - Tyler Hennen; A. Elias; Jean-Francois Nodin; Gabriel Molas; Rainer Waser; Dirk J. Wouters; Daniel Bedau (CoRR, 2022)

Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array. - Vivek Parmar; Sandeep Kaur Kingra; Deepak Verma; Digamber Pandey; Giuseppe Piccolboni; Alessandro Bricalli; Amir Regev; Gabriel Pares; Laurent Grenouillet; Jean-François Nodin; Manan Suri (IMW, 2023)

Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability. - Lucas Reganaz; Damien Deleruyelle; Quentin Rafhay; Joel Minguet Lopez; Niccolo Castellani; Jean-François Nodin; Alessandro Bricalli; Giuseppe Piccolboni; Gabriel Molas; François Andrieu (IRPS, 2023)

Experimental Demonstration of Non-Stateful In-Memory Logic With 1T1R OxRAM Valence Change Mechanism Memristors. - Henriette Padberg; Amir Regev; Giuseppe Piccolboni; Alessandro Bricalli; Gabriel Molas; Jean-Francois Nodin; Shahar Kvatinsky (IEEE Trans. Circuits Syst. II Express Briefs, 2024)