A new triggering mode in a vertical bi-directional MOS-thyristor device. - Abdelhakim Bourennane; Marie Breil; Jean-Louis Sanchez; P. Austin; J. Jalade (Microelectron. J., 2004)

New distributed model of NPT IGBT dedicated to power circuits design. - Guillaume Bonnet; Patrick Austin; Jean-Louis Sanchez (Microelectron. Reliab., 2004)

A vertical monolithical MOS thyristor bi-directional device. - A. Bourennane; Marie Breil; Jean-Louis Sanchez; J. Jalade (Microelectron. J., 2006)

Integrated IGBT short-circuit protection structure: Design and optimization. - C. Caramel; P. Austin; Jean-Louis Sanchez; E. Imbernon; Marie Breil (Microelectron. J., 2006)

Applications of the Thermal Step Method to the Characterization of Electric Charge in MOS Components. - Olivier Fruchier; Petru Notingher Jr.; Serge Agnel; Alain Toureille; F. Forest; S. Cunningham; Bernard Rousset; Jean-Louis Sanchez (IAS, 2007)

Analysis of Data Obtained Using the Thermal Step Method on a MOS Structure - An Electrostatic Approach. - Ludovic Boyer; Olivier Fruchier; Petru Notingher Jr.; Serge Agnel; Alain Toureille; Bernard Rousset; Jean-Louis Sanchez (IAS, 2008)

Measurement of Charge Evolution in Oxides of DC Stressed MOS Structures. - Ludovic Boyer; Petru Notingher Jr.; Serge Agnel; Bernard Rousset; Jean-Louis Sanchez (IAS, 2010)