Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level. - Jean-Luc Autran; Daniela Munteanu; Philippe Roche; Gilles Gasiot; S. Martinie; S. Uznanski; S. Sauze; S. Semikh; Evgeny Yakushev; S. Rozov; Pia Loaiza; G. Warot; et al. (Microelectron. Reliab., 2010)

Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits. - Jean-Luc Autran; Maximilien Glorieux; Daniela Munteanu; Sylvain Clerc; Gilles Gasiot; Philippe Roche (Microelectron. Reliab., 2014)

Real-time soft-error rate measurements: A review. - Jean-Luc Autran; Daniela Munteanu; Philippe Roche; Gilles Gasiot (Microelectron. Reliab., 2014)

Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation. - Daniela Munteanu; Jean-Luc Autran (Microelectron. Reliab., 2014)

Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs. - Gilles Gasiot; Dimitri Soussan; Jean-Luc Autran; Victor Malherbe; Philippe Roche (IRPS, 2015)

Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis. - Victor Malherbe; Gilles Gasiot; Dimitri Soussan; Aurelien Patris; Jean-Luc Autran; Philippe Roche (IRPS, 2015)

Radiation and COTS at ground level. - Jean-Luc Autran; Daniela Munteanu (Microelectron. Reliab., 2015)

ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure. - Jean-Luc Autran; Daniela Munteanu; Soilihi Moindjie; Tarek Saad Saoud; S. Sauze; Gilles Gasiot; Philippe Roche (Microelectron. Reliab., 2015)

SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation. - Daniela Munteanu; Jean-Luc Autran (Microelectron. Reliab., 2015)

3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. - Daniela Munteanu; Jean-Luc Autran (Microelectron. Reliab., 2015)

On-chip supply power measurement and waveform reconstruction in a 28nm FD-SOI processor SoC. - Martin Cochet; Alberto Puggelli; Ben Keller; Brian Zimmer; Milovan Blagojevic; Sylvain Clerc; Philippe Roche; Jean-Luc Autran; Borivoje Nikolic (A-SSCC, 2016)

A 28nm FD-SOI standard cell 0.6-1.2V open-loop frequency multiplier for low power SoC clocking. - Martin Cochet; Sylvain Clerc; Mehdi Naceur; Pierre Schamberger; Damien Croain; Jean-Luc Autran; Philippe Roche (ISCAS, 2016)

Natural radiation events in CCD imagers at ground level. - Tarek Saad Saoud; Soilihi Moindjie; Daniela Munteanu; Jean-Luc Autran (Microelectron. Reliab., 2016)

A 0.40pJ/cycle 981 μm2 voltage scalable digital frequency generator for SoC clocking. - Martin Cochet; Sylvain Clerc; Guenole Lallement; Fady Abouzeid; Philippe Roche; Jean-Luc Autran (A-SSCC, 2017)

A 2.7pJ/cycle 16MHz SoC with 4.3nW power-off ARM Cortex-M0+ core in 28nm FD-SOI. - Guenole Lallement; Fady Abouzeid; Martin Cochet; Jean-Marc Daveau; Philippe Roche; Jean-Luc Autran (ESSCIRC, 2017)

Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs. - Soilihi Moindjie; Jean-Luc Autran; Daniela Munteanu; Gilles Gasiot; Philippe Roche (Microelectron. Reliab., 2017)

Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation. - Daniela Munteanu; Jean-Luc Autran; Soilihi Moindjie (Microelectron. Reliab., 2017)

A 140 nW, 32.768 kHz, 1.9 ppm/°C Leakage-Based Digitally Relocked Clock Reference with 0.1 ppm Long-Term Stability in 28nm FD-SOI. - Guenole Lallement; Fady Abouzeid; Thierry Di Gilio; Philippe Roche; Jean-Luc Autran (A-SSCC, 2018)

Q-Learning-based Adaptive Power Management for IoT System-on-Chips with Embedded Power States. - Yvan Debizet; Guénolé Lallement; Fady Abouzeid; Philippe Roche; Jean-Luc Autran (ISCAS, 2018)

A 2.7 pJ/cycle 16 MHz, 0.7 µW Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 nm FD-SOI. - Guenole Lallement; Fady Abouzeid; Martin Cochet; Jean-Marc Daveau; Philippe Roche; Jean-Luc Autran (IEEE J. Solid State Circuits, 2018)

Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions. - Ygor Q. Aguiar; Frederic Wrobel; Jean-Luc Autran; Paul Leroux; Frédéric Saigné; Antoine D. Touboul; Vincent Pouget (Microelectron. Reliab., 2018)

Effect of Temperature on Single Event Latchup Sensitivity. - S. Guagliardo; Frederic Wrobel; Ygor Q. Aguiar; Jean-Luc Autran; Paul Leroux; Frédéric Saigné; Vincent Pouget; Antoine D. Touboul (DTIS, 2020)