Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions. - Didier Goguenheim; D. Pic; Jean-Luc Ogier (Microelectron. Reliab., 2007)

A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. - D. Pic; Didier Goguenheim; Jean-Luc Ogier (Microelectron. Reliab., 2007)

A new method to quantify retention-failed cells of an EEPROM CAST. - Claire Le Roux; Laurent Lopez; Abdellatif Firiti; Jean-Luc Ogier; Frédéric Lalande; Romain Laffont; Gilles Micolau (Microelectron. Reliab., 2007)

Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO2 thin oxides stressed to hard breakdown. - D. Pic; Didier Goguenheim; Jean-Luc Ogier (Microelectron. Reliab., 2008)

Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. - D. Pic; Arnaud Régnier; V. Pean; Jean-Luc Ogier; Didier Goguenheim (Microelectron. Reliab., 2008)

Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities. - Christelle Bénard; Gaëtan Math; Pascal Fornara; Jean-Luc Ogier; Didier Goguenheim (Microelectron. Reliab., 2009)

Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress. - Y. Joly; Laurent Lopez; Jean-Michel Portal; Hassen Aziza; Jean-Luc Ogier; Y. Bert; Franck Julien; Pascal Fornara (Microelectron. Reliab., 2011)

Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability. - Guillaume Just; Vincenzo Della Marca; Arnaud Régnier; Jean-Luc Ogier; Jérémy Postel-Pellerin; Jean-Michel Portal; Pascal Masson (J. Low Power Electron., 2012)

Investigation of the effects of constant voltage stress on thin SiO2 layers using dynamic measurement protocols. - Philippe Chiquet; Pascal Masson; Romain Laffont; Gilles Micolau; Jérémy Postel-Pellerin; Frédéric Lalande; Bernard Bouteille; Jean-Luc Ogier (Microelectron. Reliab., 2012)

Effect of ions presence in the SiOCH inter metal dielectric structure. - Benjamin Rebuffat; Vincenzo Della Marca; Pascal Masson; Jean-Luc Ogier; Marc Mantelli; Olivier Paulet; Laurent Lopez; Romain Laffont (ESSDERC, 2013)

Access resistor modelling for EEPROM's retention test vehicle. - Pierre Canet; Jérémy Postel-Pellerin; Jean-Luc Ogier (Microelectron. Reliab., 2013)

Effect of AC stress on oxide TDDB and trapped charge in interface states. - Benjamin Rebuffat; Pascal Masson; Jean-Luc Ogier; Marc Mantelli; Romain Laffont (ISIC, 2014)

Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories. - Vincenzo Della Marca; Jérémy Postel-Pellerin; Guillaume Just; Pierre Canet; Jean-Luc Ogier (Microelectron. Reliab., 2014)

Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. - Giulio Torrente; Jean Coignus; Alexandre Vernhet; Jean-Luc Ogier; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2017)