Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. - Nabil Sghaier; M'Hamed Trabelsi; Noureddine Yacoubi; Jean-Marie Bluet; Abdelkader Souifi; Gérard Guillot; Christophe Gaquière; J. C. DeJaeger (Microelectron. J., 2006)

Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode. - H. Benmaza; B. Akkal; Hamza Abid; Jean-Marie Bluet; Macho Anani; Z. Bensaad (Microelectron. J., 2008)

Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. - Malek Gassoumi; Jean-Marie Bluet; Christophe Gaquière; Gérard Guillot; Hassen Maaref (Microelectron. J., 2009)

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. - Nathalie Malbert; Nathalie Labat; Arnaud Curutchet; C. Sury; V. Hoel; J.-C. de Jaeger; Nicolas Defrance; Y. Douvry; Christian Dua; Mourad Oualli; C. Bru-Chevallier; Jean-Marie Bluet; et al. (Microelectron. Reliab., 2009)

Characterization of the thermal conductivity of insulating thin films by scanning thermal microscopy. - Séverine Gomès; Pascal Newby; Bruno Canut; Konstantinos Termentzidis; Olivier Marty; Luc Frechette; Patrice Chantrenne; Vincent Aimez; Jean-Marie Bluet; Vladimir Lysenko (Microelectron. J., 2013)