Copper metallization influence on power MOS reliability. - Adeline Feybesse; Ivana Deram; Jean-Michel Reynes; Eric Moreau (Microelectron. Reliab., 2003)

Characterisation of P floating islands for 150-200 V FLYMOSFETs. - Yann Weber; Jaume Roig; Jean-Michel Reynes; Frederic Morancho; Evgueniy N. Stefanov; Monique Dilhan; Gérard Sarrabayrouse (IET Circuits Devices Syst., 2007)

Switching performance of 65 V vertical N-channel FLYMOSFETs. - L. Théolier; Karine Isoird; H. Tranduc; Frederic Morancho; Jaume Roig; Yann Weber; Evgueniy N. Stefanov; Jean-Michel Reynes (Microelectron. J., 2008)

Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling. - Toufik Azoui; Patrick Tounsi; Jean-Marie Dorkel; Jean-Michel Reynes; Jean-Luc Massol; E. Pomes (Microelectron. Reliab., 2013)

Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement and Reduction of Parameter Number. - Quang Chuc Nguyen; Patrick Tounsi; Jean-Pierre Fradin; Jean-Michel Reynes (MIXDES, 2019)