Power module lifetime estimation from chip temperature direct measurement in an automotive traction inverter. - Gerard Coquery; S. Carubelli; Jean-Pierre Ousten; Richard Lallemand; Frederic Lecoq; Dominique Lhotellier; V. de Viry; Philippe Dupuy (Microelectron. Reliab., 2001)

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. - M. Bouarroudj; Zoubir Khatir; Jean-Pierre Ousten; F. Badel; Laurent Dupont 002; Stéphane Lefebvre (Microelectron. Reliab., 2007)

Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications. - Jean-Pierre Ousten; Zoubir Khatir (Microelectron. Reliab., 2011)

Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions. - Ali Ibrahim; Jean-Pierre Ousten; Richard Lallemand; Zoubir Khatir (Microelectron. Reliab., 2016)

Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. - Nausicaa Dornic; Ali Ibrahim; Zoubir Khatir; Son-Ha Tran; Jean-Pierre Ousten; Jeffrey Ewanchuk; Stefan Mollov (Microelectron. Reliab., 2018)

Effect of power cycling tests on traps under the gate of Al2O3/AlGaN/GaN normally-ON devices. - Malika Elharizi; Fadi Zaki; Ali Ibrahim; Zoubir Khatir; Jean-Pierre Ousten (Microelectron. Reliab., 2018)