Potential and modeling of 1-μm SOI CMOS operational transconductance amplifiers for applications up to 1 GHz. - Jean-Paul Eggermont; Denis Flandre; Jean-Pierre Raskin; Jean-Pierre Colinge (IEEE J. Solid State Circuits, 1998)

DNA electrical detection based on inductor resonance frequency in standard CMOS technology. - G. Laurent; Luis Moreno Hagelsieb; Dimitri Lederer; P. E. Lobert; Denis Flandre; José Remacle; Jean-Pierre Raskin (ESSCIRC, 2003)

3-D Self-Assembled Soi Mems: An Example of Multiphysics Simulation - Carlos Méndez; Christophe Louis; S. Paquay; P. De Vincenzo; Igor Klapka; Veronique Rochus; F. Iker; Nicolas André; Jean-Pierre Raskin (CoRR, 2007)

New Internal Stress Driven on-Chip Micromachines for Extracting Mechanical Properties of Thin Films - D. Fabrègue; Nicolas André; T. Pardoen; Jean-Pierre Raskin (CoRR, 2007)

Out-of-Plane Cmos Compatible Magnetometers - M. El Ghorba; Nicolas André; S. Sobieski; Jean-Pierre Raskin (CoRR, 2008)

Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. - Rodrigo Trevisoli Doria; Antonio Cerdeira; Jean-Pierre Raskin; Denis Flandre; Marcelo Antonio Pavanello (Microelectron. J., 2008)

MIMC reliability and electrical behavior defined by a physical layer property of the dielectric. - Jan Ackaert; R. Charavel; K. Dhondt; B. Vlachakis; Luc De Schepper; M. Millecam; E. Vandevelde; P. Bogaert; A. Iline; Eddy De Backer; Alexandru Vlad; Jean-Pierre Raskin (Microelectron. Reliab., 2008)

Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer. - C. Roda Neve; Valeria Kilchytska; Joaquín Alvarado; Dimitri Lederer; O. Militaru; Denis Flandre; Jean-Pierre Raskin (Microelectron. Reliab., 2011)

Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets. - Sergej Makovejev; Babak Kazemi Esfeh; Jean-Pierre Raskin; Denis Flandre; Valeria Kilchytska; François Andrieu (ESSDERC, 2013)

Variability of UTBB MOSFET analog figures of merit in wide frequency range. - Sergej Makovejev; Babak Kazemi Esfeh; Jean-Pierre Raskin; Valeria Kilchytska; Denis Flandre; Vincent Barral; Nicolas Planes; Michel Haond (ESSDERC, 2014)

RF and non-linearity characterization of porous silicon layer for RF-ICs. - Yasmina Belaroussi; Abdelhalim Slimane; Mohand-Tahar Belaroussi; Mohamed Trabelsi 002; Gilles Scheen; Khaled Ben Ali; Jean-Pierre Raskin (IDT, 2014)

SOI technology: An opportunity for RF designers? - Jean-Pierre Raskin (VLSI-DAT, 2014)

FinFET versus UTBB SOI - A RF perspective. - Jean-Pierre Raskin (ESSDERC, 2015)

Through silicon via to FinFET noise coupling in 3-D integrated circuits. - A. Rouhi Najaf Abadi; W. Guo; X. Sun; K. Ben Ali; Jean-Pierre Raskin; Martin Rack; C. Roda Neve; M. Choi; V. Moroz; Geert Van der Plas; Ingrid De Wolf; Eric Beyne; et al. (ICICDT, 2015)

Engineered substrates: The foundation to meet current and future RF requirements. - Jean-Marc Le Meil; Bernard Aspar; Eric Desbonnets; Jean-Pierre Raskin (VLSI-DAT, 2015)

Efficient passive energy harvesters at 950 MHz and 2.45 GHz for 100 μW applications in 65 nm CMOS. - Pierre-Antoine Haddad; Jean-Pierre Raskin; Denis Flandre (ICECS, 2016)

Automated design of a 13.56 MHz corner-robust efficient differential drive rectifier for 10 μA load. - Pierre-Antoine Haddad; Jean-Pierre Raskin; Denis Flandre (ISCAS, 2016)

Automated Design of a 13.56 MHz 19µW Passive Rectifier With 72% Efficiency Under 10µA load. - Pierre-Antoine Haddad; Geoffroy Gosset; Jean-Pierre Raskin; Denis Flandre (IEEE J. Solid State Circuits, 2016)

Back-gate bias effect on UTBB-FDSOI non-linearity performance. - B. Kazemi Esfeh; Valeria Kilchytska; Bertrand Parvais; Nicolas Planes; M. Haond; Denis Flandre; Jean-Pierre Raskin (ESSDERC, 2017)

A Formaldehyde Sensor Based on Molecularly-Imprinted Polymer on a TiO2 Nanotube Array. - Xiaohui Tang; Jean-Pierre Raskin; Driss Lahem; Arnaud Krumpmann; André Decroly; Marc Debliquy (Sensors, 2017)

Optical Fibre NO2 Sensor Based on Lutetium Bisphthalocyanine in a Mesoporous Silica Matrix. - Marc Debliquy; Driss Lahem; Antonio Bueno-Martinez; Christophe Caucheteur; Marcel Bouvet; Isaline Recloux; Jean-Pierre Raskin; Marie-Georges Olivier (Sensors, 2018)

Design and Modeling of a MEMS Dual-Backplate Capacitive Microphone with Spring-Supported Diaphragm for Mobile Device Applications. - Néstor N. Peña-García; Luz Antonio Aguilera-Cortés; Max A. González-Palacios; Jean-Pierre Raskin; Agustín Leobardo Herrera-May (Sensors, 2018)

Design of a Novel MEMS Microgripper with Rotatory Electrostatic Comb-Drive Actuators for Biomedical Applications. - Luis A. Velosa-Moncada; Luz Antonio Aguilera-Cortés; Max A. González-Palacios; Jean-Pierre Raskin; Agustín Leobardo Herrera-May (Sensors, 2018)

Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures. - Lucas Nyssens; Arka Halder; Babak Kazemi Esfeh; Nicolas Planes; Michel Haond; Denis Flandre; Jean-Pierre Raskin; Valeriya Kilchytska (ESSDERC, 2019)

Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. - Pieter Cardinael; Sachin Yadav 001; Ming Zhao; Martin Rack; Dimitri Lederer; Nadine Collaert; Bertrand Parvais; Jean-Pierre Raskin (ESSDERC, 2021)

High-Temperature Characterization of Novel Silicon-Based Substrate Solutions for RF-IC Applications. - Quentin Courte; Martin Rack; M. Nabet; Pieter Cardinael; Jean-Pierre Raskin (ESSDERC, 2021)

Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOI. - Martin Rack; Lucas Nyssens; Quentin Courte; Dimitri Lederer; Jean-Pierre Raskin (ESSDERC, 2021)

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. - Sachin Yadav 001; Pieter Cardinael; Ming Zhao; Komal Vondkar; Uthayasankaran Peralagu; AliReza Alian; Ahmad Khaled; Sergej Makovejev; Enrique Ekoga; Dimitri Lederer; Jean-Pierre Raskin; Bertrand Parvais; et al. (ICICDT, 2021)

A Review on Functionalized Graphene Sensors for Detection of Ammonia. - Xiaohui Tang; Marc Debliquy; Driss Lahem; Yiyi Yan; Jean-Pierre Raskin (Sensors, 2021)

The Environmental Footprint of IC Production: Meta-Analysis and Historical Trends. - Thibault Pirson; Thibault P. Delhaye; Alex Pip; Grégoire Le Brun; Jean-Pierre Raskin; David Bol (ESSDERC, 2022)

Sub-ppm detection of H2S with CuO-loaded SnO2 hollow nanospheres deposited on interdigitated electrodes. - Oriane de Leuze; Yann Danlée; Xiaohui Tang; Julien Mahy; Thomas Walewyns; Jean-Pierre Raskin; Sophie Hermans; Laurent A. Francis (ISOEN, 2022)

Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET. - Rameez Raja Shaik; Chandrasekar Lakshumanan; Jean-Pierre Raskin; Kumar Prasannajit Pradhan (Microelectron. J., 2022)

Variation Range of Different Inductor Topologies with Shields for RF and Inductive Sensing Applications. - Fares Tounsi; Mohamed Hadj Said; Margo Hauwaert; Sinda Kaziz; Laurent A. Francis; Jean-Pierre Raskin; Denis Flandre (Sensors, 2022)

RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature. - Quentin Berlingard; M. Moulin; Jean-Philippe Michel; T. Fache; Ismael Charlet; C. Plantier; Z. Chalupa; Jose Lugo-Alvarez; Jean-Pierre Raskin; Louis Hutin; Mikaël Cassé (ESSDERC, 2023)

Near-IR response of highly-strained Si photodetector linking first principles and TCAD. - Nicolas Roisin; Jean-Pierre Raskin; Denis Flandre (ESSDERC, 2023)

The Paradox of Industrial Involvement in Engineering Higher Education. - Srinjoy Mitra; Jean-Pierre Raskin (FIE, 2023)

Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI. - Youssef Bendou; Martin Rack; Dimitri Lederer; Andreia Cathelin; Jean-Pierre Raskin (NEWCAS, 2023)

Role of ICT Innovation in Perpetuating the Myth of Techno-Solutionism. - Srinjoy Mitra; Jean-Pierre Raskin; Mario Pansera (CoRR, 2023)

Embodied Carbon Footprint of 3D NAND Memories. - Olivier Weppe; Thibaut Marty; Sébastien Toussaint; Nicolas Brusselmans; Jean-Christophe Prévotet; Jean-Pierre Raskin; Maxime Pelcat (CF (Companion), 2025)

Analysis of Back-Gate Bias Control on EVM Measurements of a Dual-Band Power Amplifier in 22 nm FD-SOI for 5G 28 and 39 GHz Applications. - Lucas Nyssens; M. Nabet; Martin Rack; Youssef Bendou; Sidina Wane; Jacques Sombrin; Jean-Pierre Raskin; Dimitri Lederer (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)