Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment. - Ji Chen; Jen-Chung Lou; Kuan-Chang Chang; Ting-Chang Chang; Tsung-Ming Tsai; Chih-Hung Pan (ASICON, 2015)

Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer. - Yi-Shao Chen; Zongwei Wang 001; Zhihong Zhang; Li Wang 058; Yichen Fang; Jen-Chung Lou; Kaihui Liu; Jintong Xu; Yimao Cai; Ru Huang 001 (NVMTS, 2018)