Investigations of photo-assisted conductive atomic force microscopy on III-nitrides. - Mao-Nan Chang; Ruo-Syuan Lin; Hsueh-Hsing Liu; Hung-Min Lin; Hung-Cheng Lin; Jen-Inn Chyi (Microelectron. J., 2009)

Challenges and Opportunities in GaN and ZnO Devices and Materials. - Hadis Morkoç; Jen-Inn Chyi; Alois Krost; Yasushi Nanishi; Donald J. Silversmith (Proc. IEEE, 2010)

A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate. - Hsien-Chin Chiu; Chao-Wei Lin; Hsuan-Ling Kao; Geng-Yen Lee; Jen-Inn Chyi; Hao-Wei Chuang; Kuo-Jen Chang; Yau-Tang Gau (Microelectron. Reliab., 2012)

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors. - Hsien-Chin Chiu; Wen-Yu Lin; W. J. Hsueh; Pei-Chin Chiu; Yue-Ming Hsin; Jen-Inn Chyi (Microelectron. Reliab., 2015)

N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator. - Hsien-Chin Chiu; Chia-Hsuan Wu; Ji-Fan Chi; Jen-Inn Chyi; Geng-Yen Lee (Microelectron. Reliab., 2015)