On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. - William Vandendaele; Thomas Lorin; Romain Gwoziecki; Yannick Baines; Jérome Biscarrat; Marie-Anne Jaud; Charlotte Gillot; Matthew Charles; Marc Plissonnier; Gilles Reimbold (ESSDERC, 2017)

Study of forward AC stress degradation of GaN-on-Si Schottky diodes. - Thomas Lorin; William Vandendaele; Romain Gwoziecki; Charlotte Gillot; Jérome Biscarrat; Gérard Ghibaudo; Fred Gaillard (Microelectron. Reliab., 2018)

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Jean Coignus; Jacques Cluzel; Alexis Krakovinsky; Simon Martin 006; Jérome Biscarrat; Romain Gwoziecki; Veronique Sousa; Fred Gaillard; Roberto Modica; et al. (IRPS, 2021)