Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs. - L. Lu; Z. Chen; Angus T. Bryant; Enrico Santi; Jerry L. Hudgins; Patrick R. Palmer (IAS, 2007)

Variable model levels for power semiconductor devices. - Enrico Santi; Jerry L. Hudgins; H. Alan Mantooth (SCSC, 2007)

Simulating power semiconductor devices using variable model levels. - Enrico Santi; Liqubf Lu; Zhiyang Chen; Jerry L. Hudgins; H. Alan Mantooth (SCSC, 2007)

A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field. - Elisa Platania; Zhiyang Chen; Filippo Chimento; Liqing Lu; Enrico Santi; Angelo Raciti; Jerry L. Hudgins; H. Alan Mantooth; David C. Sheridan; J. Cassady (IAS, 2008)

Modeling Bipolar Power Semiconductor Devices - Tanya K. Gachovska; Jerry L. Hudgins; Enrico Santi; Angus T. Bryant; Patrick R. Palmer (Morgan & Claypool Publishers, 2013)

Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices - Tanya K. Gachovska; Bin Du; Jerry L. Hudgins; Enrico Santi (Morgan & Claypool Publishers, 2013)