A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9μm unit pixels separated by full-depth deep-trench isolation. - Yitae Kim; Wonchul Choi; Donghyuk Park; Heegeun Jeoung; Bumsuk Kim; Youngsun Oh; Sunghoon Oh; Byungjun Park; Euiyeol Kim; Yunki Lee; Taesub Jung; Yongwoon Kim; et al. (ISSCC, 2018)

A 1/3-Inch 1.12μm-Pitch 13Mpixel CMOS Image Sensor with a Low-Power Readout Architecture. - Yunhong Kim; Heesung Chae; Kyung-Min Kim; Kyungtae Kim; Sukki Yoon; Kyoungmin Koh; Jesuk Lee; Yongin Park (ISCAS, 2020)

A Low-Power 65/14nm Stacked CMOS Image Sensor. - Minho Kwon; Seunghyun Lim; Hyeokjong Lee; Il-Seon Ha; Moo-Young Kim; Il-Jin Seo; Suho Lee; Yongsuk Choi; Kyunghoon Kim; Hansoo Lee; Won-Woong Kim; Seonghye Park; et al. (ISCAS, 2020)

A 400-to-1000nm 24μ W Monolithic PPG Sensor with 0.3A/W Spectral Responsivity for Miniature Wearables. - Sung-jin Jung; Jeil Ryu; Wanghyun Kim; Seunghoon Lee; Jongboo Kim; Hyelim Park; Taeyoul Jang; Haedo Jeong; Ju-Hwa Kim; Jeongho Park; Raeyoung Kim; Jeonghoon Park; et al. (ISSCC, 2021)

A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-μm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation. - Min-Sun Keel; Daeyun Kim; Yeomyung Kim; Myunghan Bae; Myoungoh Ki; Bumsik Chung; Sooho Son; Hoyong Lee; Seung-Chul Shin; Myeonggyun Kye; Jaeil An; Yonghun Kwon; et al. (IEEE J. Solid State Circuits, 2021)

A 0.7 μm-Pitch 108 Mpixel Nonacell-Based CMOS Image Sensor with Decision-Feedback Technique. - Jaehoon Jun; Haneol Seo; Hyukbin Kwon; Jongyeon Lee; Beomsoo Yoon; Youngwoo Lee; Yongbin Kim; Woong Joo; Jesuk Lee; Kyoungmin Koh (ISCAS, 2022)

A Temporal Noise Reduction via 40% Enhanced Conversion Gain in Dual-Pixel CMOS Image Sensor with Full-Depth Deep-Trench Isolation and Locally Lowered-Stack Technology. - Seunghwan Lee; Jeongjin Cho; Shinyoung Choi; Sung Yoon Min; Eunjung Lee; Minji Jung; Kyoungmok Son; Hyunchaul Jeong; Heetak Han; Sachoun Park; Sanghyuck Moon; Seungki Jung; et al. (VLSI Technology and Circuits, 2024)