Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's. - Jesús A. del Alamo; Mark H. Somerville (IEEE J. Solid State Circuits, 1999)

Book "Advances on remote laboratories and e-learning experiences". - Jesús A. del Alamo (Int. J. Online Eng., 2007)

The iLab Shared Architecture: A Web Services Infrastructure to Build Communities of Internet Accessible Laboratories. - V. Judson Harward; Jesús A. del Alamo; Steven R. Lerman; Philip H. Bailey; Joel Carpenter; Kimberly DeLong; Chris Felknor; James L. Hardison; Bryant Harrison; Imad Jabbour; Phillip D. Long; Tingting Mao; et al. (Proc. IEEE, 2008)

A Versatile Internet-Accessible Electronics Workbench with Troubleshooting Capabilities. - Hamidou Soumare; Rahul Shroff; James L. Hardison; Jesús A. del Alamo; V. Judson Harward; Philip H. Bailey; Kirky K. DeLong (Int. J. Online Eng., 2009)

GaN HEMT reliability. - Jesús A. del Alamo; Jungwoo Joh (Microelectron. Reliab., 2009)

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions. - Takayuki Hisaka; Hajime Sasaki; Yoichi Nogami; Kenji Hosogi; Naohito Yoshida; Anita A. Villanueva; Jesús A. del Alamo; Shigehiko Hasegawa; Hajime Asahi (Microelectron. Reliab., 2009)

Simultaneous achievement of high performance and high reliability in a 38/77GHz InGaAs/AlGaAs PHEMT MMIC. - Takayuki Hisaka; Hajime Sasaki; Takayuki Kato; Ko Kanaya; Naohito Yoshida; Anita A. Villanueva; Jesús A. del Alamo (IEICE Electron. Express, 2010)

Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices. - Usha Gogineni; Hongmei Li; Jesús A. del Alamo; Susan L. Sweeney; Jing Wang; Basanth Jagannathan (IEEE J. Solid State Circuits, 2010)

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate. - Sefa Demirtas; Jungwoo Joh; Jesús A. del Alamo (Microelectron. Reliab., 2010)

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. - Jungwoo Joh; Feng Gao; Tomás Palacios; Jesús A. del Alamo (Microelectron. Reliab., 2010)

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors. - Jungwoo Joh; Jesús A. del Alamo; Kurt Langworthy; Sujing Xie; Tsvetanka Zheleva (Microelectron. Reliab., 2011)

Issues Faced in a Remote Instrumentation Laboratory. - Shreya Malani; G. N. Srinivasa Prasanna; Jesús A. del Alamo; James L. Hardison; Kannan M. Moudgalya; Venkatesh Chopella (T4E, 2012)

Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs. - Donghyun Jin; Jesús A. del Alamo (Microelectron. Reliab., 2012)

Impact of gate placement on RF power degradation in GaN high electron mobility transistors. - Jungwoo Joh; Jesús A. del Alamo (Microelectron. Reliab., 2012)

Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologies. - Jesús A. del Alamo (ESSDERC, 2013)

Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress. - Yufei Wu 005; Chia-Yu Chen; Jesús A. del Alamo (Microelectron. Reliab., 2014)

Positive-bias temperature instability (PBTI) of GaN MOSFETs. - Alex Guo; Jesús A. del Alamo (IRPS, 2015)

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs. - Ethan S. Lee; Luis Hurtado; Jungwoo Joh; Srikanth Krishnan; Sameer Pendharkar; Jesús A. del Alamo (IRPS, 2019)

Analysis and Optimization of Multi-Winding Toroidal Inductors for Use in Multilayered Technologies. - Neus Vidal; José María López-Villegas; Jesús A. del Alamo (IEEE Access, 2019)

Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic Transport. - Jesús A. del Alamo; Xiaowei Cai; Xin Zhao; Alon Vardi; Jesús Grajal (ESSDERC, 2021)

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs. - Ethan S. Lee; Jungwoo Joh; Dong-Seup Lee; Jesús A. del Alamo (IRPS, 2022)

Neural Network Training With Asymmetric Crosspoint Elements. - O. Murat Onen; Tayfun Gokmen; Teodor K. Todorov; Tomasz Nowicki; Jesús A. del Alamo; John Rozen; Wilfried Haensch; Seyoung Kim (Frontiers Artif. Intell., 2022)