Optimisation of very low voltage TVS protection devices. - Jesús Urresti; Salvador Hidalgo; David Flores; Jaume Roig; José Rebollo; I. Mazarredo (Microelectron. J., 2003)

Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. - Ignasi Cortés; Jaume Roig; David Flores; Jesús Urresti; Salvador Hidalgo; José Rebollo (Microelectron. Reliab., 2005)

Lateral punch-through TVS devices for on-chip protection in low-voltage applications. - Jesús Urresti; Salvador Hidalgo; David Flores; Jaume Roig; Ignasi Cortés; José Rebollo (Microelectron. Reliab., 2005)

Robustness test and failure analysis of IGBT modules during turn-off. - Jesús Urresti-Ibañez; Alberto Castellazzi; M. Piton; José Rebollo; Michel Mermet-Guyennet; Mauro Ciappa (Microelectron. Reliab., 2007)

IGBT module failure analysis in railway applications. - X. Perpiñà; Jean-François Serviere; Xavier Jordà; A. Fauquet; Salvador Hidalgo; Jesús Urresti-Ibañez; José Rebollo; Michel Mermet-Guyennet (Microelectron. Reliab., 2008)

Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions. - Xavier Perpiñà; Jean-François Serviere; Jesús Urresti-Ibañez; Ignasi Cortés; Xavier Jordà; Salvador Hidalgo; José Rebollo; Michel Mermet-Guyennet (IEEE Trans. Ind. Electron., 2011)

Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling. - Ignasi Cortés; Xavier Perpiñà; Jesús Urresti; Xavier Jordà; José Rebollo (Microelectron. Reliab., 2012)

3.3 kV PT-IGBT with voltage-sensor monolithically integrated. - Jesús Urresti; Salvador Hidalgo; David Flores; Daniel Fernández Hevia (IET Circuits Devices Syst., 2014)

Overload robust IGBT design for SSCB application. - Ihsan Supono; Jesús Urresti; Alberto Castellazzi; David Flores (Microelectron. Reliab., 2014)