Device characteristics of AlGaN/GaN MIS-HEMTs with high-k HfxZr1-xO2 (x = 0.66, 0.47, 0.15) insulator layer. - Hsien-Chin Chiu; Chia-Hsuan Wu; Ji-Fan Chi; Feng-Tso Chien (Microelectron. Reliab., 2014)

N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator. - Hsien-Chin Chiu; Chia-Hsuan Wu; Ji-Fan Chi; Jen-Inn Chyi; Geng-Yen Lee (Microelectron. Reliab., 2015)

The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment. - Hsien-Chin Chiu; Ji-Fan Chi; Hsuan-Ling Kao; Chia-Yi Chu; Kuan-Liang Cho; Feng-Tso Chien (Microelectron. Reliab., 2016)