Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESURF LDMOS. - Yufeng Guo; Kemeng Yang; Jing Chen; Man Li; Zhengfei Jiang; Jiafei Yao; Jun Zhang; Maolin Zhang (ASICON, 2023)

Step thickness drift region automatic design of SOI LDMOS using physics-inspired constrained simulated annealing algorithm. - Jing Chen 032; Jiajun Guo; Qing Yao; Kemeng Yang; Jun Zhang 057; Jiafei Yao; Yufeng Guo (Microelectron. J., 2024)

General neural network-based static performance prediction model construction techniques for gate-all-around and planar field effect transistor. - Jing Chen 032; Jiahao Wu; Wei Du; Qing Yao; Kemeng Yang; Jun Zhang 057; Jiafei Yao; Yufeng Guo (Microelectron. J., 2024)

Performance enhancement of 4H-SiC superjunction trench MOSFET with extended high-K dielectric. - Jiafei Yao; Zhengfei Yang; Yeqin Zhu; Qing Yao; Jing Chen; Kemeng Yang; Man Li; Maolin Zhang; Jun Zhang; Yufeng Guo (Microelectron. J., 2024)

A cross-scale investigation on transient electrothermal performance for power MOSFETs at device-package level. - Yuxuan Dai; Jiafei Yao; Jing Chen 032; Maolin Zhang; Yucheng Xu; Qing Yao; Qingyou Qian; Jun Zhang 057; Kemeng Yang; Yufeng Guo (Microelectron. J., 2025)

A novel double-trench SiC SBD-embedded MOSFET with improved figure-of-merit and short-circuit ruggedness. - Ziwei Hu; Jiafei Yao; Fan Yang; Yuxuan Dai; Kemeng Yang; Man Li; Jing Chen 032; Maolin Zhang; Jun Zhang 057; Yufeng Guo (Microelectron. J., 2025)

Self-adaptive body bias tuning technique for enhancing Baliga's figure-of-merit (BFOM) in thin bulk silicon LDMOS. - Man Li; Xinyu Zhang; Kemeng Yang; Jiafei Yao; Jun Zhang 057; Jing Chen 032; Yufeng Guo (Microelectron. J., 2025)

Efficient Automatic Design of IGBT Structural Parameters Using Differential Evolution and Machine Learning Model. - Qing Yao; Jing Chen 032; Kemeng Yang; Jiafei Yao; Jun Zhang 057; Yuxuan Dai; Weihua Tang; Bo Zhang 027; Yufeng Guo (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2025)