Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit. - Jiali Huo; Weixing Huang; Fan Zhang; Shengli Zhang; Weizhuo Gan; Qiang Huo; Yuwei Cai; Qingzhu Zhang; Yongliang Li; Huilong Zhu; Huaxiang Yin; Zhenhua Wu (Microelectron. J., 2021)

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. - Zhaohao Zhang; Guoliang Tian; Jiali Huo; Fang Zhang; Qingzhu Zhang; Gaobo Xu; Zhenhua Wu; Yan Cheng; Yan Liu; Huaxiang Yin (Sci. China Inf. Sci., 2023)

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. - Zhaohao Zhang; Guohui Zhan; Weizhuo Gan; Yan Cheng; Xumeng Zhang; Yue Peng; Jianshi Tang; Fan Zhang; Jiali Huo; Gaobo Xu; Qingzhu Zhang; Zhenhua Wu; et al. (Adv. Intell. Syst., 2023)