Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications. - Xin-Yi Wang; Lin-An Yang; Xuan Huang; Jian-Hua Zhou; Xiao-Hua Ma 001; Yue Hao 001 (Microelectron. J., 2024)

A comprehensive study on the electrical effects of avalanche region on GaN Schottky barrier IMPATT diodes through injection phases. - Xuan Huang; Lin-An Yang; Jian-Hua Zhou; Xin-Yi Wang; Dong-Liang Chen; Xiaohua Ma 001; Yue Hao 001 (Microelectron. J., 2025)

Study of GaN Schottky barrier IMPATT diodes with a self-aligned field plate for terahertz applications. - Xuan Huang; Lin-An Yang; Jian-Hua Zhou; Xin-Yi Wang; Xiao-Hua Ma 001; Yue Hao 001 (Microelectron. J., 2025)