A ReRAM-Based Computing-in-Memory Convolutional-Macro With Customized 2T2R Bit-Cell for AIoT Chip IP Applications. - Fei Tan; Yiming Wang; Yiming Yang; Liran Li; Tian Wang; Feng Zhang 014; Xinghua Wang; Jianfeng Gao 005; Yongpan Liu (IEEE Trans. Circuits Syst. II Express Briefs, 2020)

Nano-scaled transistor reliability characterization at nano-second regime. - Ran Cheng; Ying Sun; Yiming Qu; Wei Liu; Fanyu Liu; Jianfeng Gao 005; Nuo Xu; Bing Chen (Sci. China Inf. Sci., 2021)

Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM With Input-Dependent Sensing Control. - Linfang Wang; Wang Ye; Chunmeng Dou; Xin Si; Xiaoxin Xu; Jing Liu 035; Dashan Shang; Jianfeng Gao 005; Feng Zhang 014; Yongpan Liu; Meng-Fan Chang; Qi Liu 010 (IEEE Trans. Circuits Syst. II Express Briefs, 2021)

RRAM Computing-in-Memory Using Transient Charge Transferring for Low-Power and Small-Latency AI Edge Inference. - Linfang Wang; Junjie An; Wang Ye; Weizeng Li; Hanghang Gao; Yangu He; Jianfeng Gao 005; Jinshan Yue; Lingyan Fan; Chunmeng Dou (APCCAS, 2022)

16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current ( pA) Self-Selective Cells. - Yaxin Ding; Jianguo Yang; Yu Liu; Jianfeng Gao 005; Yuan Wang; Pengfei Jiang; Shuxian Lv; Yuting Chen; Boping Wang; Wei Wei; Tiancheng Gong; Kanhao Xue; et al. (VLSI Technology and Circuits, 2023)

First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip. - Tiancheng Gong; Lihua Xu; Wei Wei; Pengfei Jiang; Peng Yuan; Bowen Nie; Yuanquan Huang; Yuan Wang; Yang Yang; Jianfeng Gao 005; Junfeng Li; Jun Luo; et al. (VLSI Technology and Circuits, 2023)

A Security-Enhanced, Charge-Pump-Free, ISO14443-A-/ISO10373-6-Compliant RFID Tag With 16.2-μW Embedded RRAM and Reconfigurable Strong PUF. - Qirui Ren; Qiang Huo; Zhisheng Chen; Qi Gao; Yiming Wang; Yiming Yang; Hao Wu 084; Xiangqu Fu; Xiaoxin Xu; Qing Luo; Jianfeng Gao 005; Chengying Chen; et al. (IEEE Trans. Very Large Scale Integr. Syst., 2023)

Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory. - Yan Huang; Kaihua Cao; Kun Zhang; Jinkai Wang; Kewen Shi; Zuolei Hao; Wenlong Cai; Ao Du; Jialiang Yin; Qing Yang; Junfeng Li; Jianfeng Gao 005; et al. (Sci. China Inf. Sci., 2023)

Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes. - Haoran Yu; Tiancheng Gong; Peng Yuan; Yuan Wang; Zhaomeng Gao; Xiaoxin Xu; Ying Sun; Ran Cheng; Jianfeng Gao 005; Junfeng Li; Bing Chen; Qing Luo (Sci. China Inf. Sci., 2023)

A high bit rate and self-stable probability true random number generator based on magnetic tunnel junction for IoT security applications. - Sinan Zou; Xing Zhao; Yuan Xue; Jianfeng Gao 005; Yilu Li; Yan Cui; Jun Luo (IEICE Electron. Express, 2025)