Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. - Teng Ma; Xuefeng Yu; Jiangwei Cui; Qiwen Zheng; Hang Zhou; Dandan Su; Qi Guo 007 (Microelectron. Reliab., 2018)

Modeling of TID-induced leakage current in ultra-deep submicron SOI NMOSFETs. - Shanxue Xi; Qiwen Zheng; Wu Lu; Jiangwei Cui; Ying Wei; Qi Guo 007 (Microelectron. J., 2020)

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation. - Xiaolong Li; Xin Wang 141; Mohan Liu; Kunfeng Zhu; Guohua Shui; Qiwen Zheng; Jiangwei Cui; Wu Lu; Yudong Li; Qi Guo 007 (IEEE Access, 2024)