High power IGCT compact model with impact ionization effect. - Gang Lyu; Wenpeng Zhou; Jiapeng Liu 004; Rong Zeng 001 (IECON, 2017)

An Advanced 4-in Integrated Emitter Turn-off Thyristor With Ultralow Commutation Impedance to Achieve 8 kA Turn-off Capability: Comprehensive Analysis, Design, and Experiments. - Zhengyu Chen 004; Zhanqing Yu; Biao Zhao; Jiapeng Liu 004; Jie Shang; Rik W. De Doncker; Rong Zeng 001 (IEEE Trans. Ind. Electron., 2021)

Precise Measurement Methodology of nH-Level Gate Electrode Inductance Based on Calculation-Error-Free Algorithm for Unity-Gain Turn-Off Devices. - Jiapeng Liu 004; Biao Zhao; Wenpeng Zhou; Gang Lyu; Zhengyu Chen 004; Chaoqun Xu; Zhanqing Yu; Rong Zeng 001 (IEEE Trans. Ind. Electron., 2021)

Full-Time Junction Temperature Extraction of IGCT Based on Electrothermal Model and TSEP Method for High-Power Applications. - Chaoqun Xu; Biao Zhao; Xiangyu Zhang 004; Zhengyu Chen 004; Jiapeng Liu 004; Wenpeng Zhou; Zhanqing Yu; Rong Zeng 001 (IEEE Trans. Ind. Electron., 2021)

Hybrid Parallel Collaborative Simulation Framework Integrating Device Physics with Circuit Dynamics for PDAE-Modeled Power Electronic Equipment. - Qingyuan Shi; Chijie Zhuang; Jiapeng Liu 004; Bo Lin; Xiyu Peng; Dan Wu; Zhicheng Liu; Rong Zeng 001 (CoRR, 2025)

Analysis and Design for Voltage Equalization in RB-IGCT Based Hybrid Commutated Converter Applications. - Zongze Wang; Zhanqing Yu; Chunpin Ren; Lu Qu; Chaoqun Xu; Jiapeng Liu 004; Biao Zhao; Rong Zeng 001 (IEEE Trans. Ind. Electron., 2025)