Jie-Jie Zhu

According to our database, Jie-Jie Zhu authored at least 6 papers between 2014 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.

Yilin Chen, Qing Zhu, Jie-Jie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., February, 2023

2022

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.

Siyu Liu, Xiaohua Ma, Jie-Jie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao

Sci. China Inf. Sci., 2022

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs.

Ran Ye, Xiaolong Cai, Chenglin Du, Haijun Liu, Yu Zhang, Xiangyang Duan, Jie-Jie Zhu

IEEE Access, 2022

2020

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.

Qing Zhu, Xiaohua Ma, Bin Hou, Mei Wu, Jie-Jie Zhu, Ling Yang, Meng Zhang, Yue Hao

IEEE Access, 2020

2018

Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs.

Jie-Jie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2014

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

Wei-Wei Chen, Xiaohua Ma, Bin Hou, Sheng-Lei Zhao, Jie-Jie Zhu, Jincheng Zhang, Yue Hao

Microelectron. Reliab., 2014