A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique. - Jiahao Yin; Chunmeng Dou; Danian Dong; Jie Yu 027; Xiaoxin Xu; Qing Luo; Tiancheng Gong; Lu Tai; Peng Yuan; Xiaoyong Xue; Ming Liu 022; Hangbing Lv (IEICE Electron. Express, 2019)

Effect of conductive filament morphology on soft error of oxide based Resistive Random Access Memory. - Xu Zheng; Jie Yu 027; Wenxuan Sun; Jinru Lai; Danian Dong; Guozhong Xing; Xiaoxin Xu (ICTA, 2021)

Scaling Potential Analysis for the CMOS Compatible Ox-RRAM. - Xiaoxin Xu; Wenxuan Sun; Jie Yu 027; Jinru Lai; Danian Dong; Hangbing Lv (IMW, 2021)

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference. - Jianguo Yang; Xiaoyong Xue; Xiaoxin Xu; Qiao Wang; Haijun Jiang; Jie Yu 027; Danian Dong; Feng Zhang 014; Hangbing Lv; Ming Liu 022 (ISSCC, 2021)

Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications. - Qingting Ding; Tiancheng Gong; Jie Yu 027; Xiaoxin Xu; Xiaoyan Li; Hangbing Lv; Jianguo Yang; Qing Luo; Peng Yuan; Feng Zhang 014; Ming Liu 022 (Sci. China Inf. Sci., 2021)

3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing. - Wenxuan Sun; Woyu Zhang; Jie Yu 027; Yi Li 049; Zeyu Guo 002; Jinru Lai; Danian Dong; Xu Zheng; Fei Wang; Shaoyang Fan; Xiaoxin Xu; Dashan Shang; et al. (VLSI Technology and Circuits, 2022)

A 0.02% Accuracy Loss Voltage-Mode Parallel Sensing Scheme for RRAM-Based XNOR-Net Application. - Yulin Zhao; Jie Yu 027; Donglin Zhang; Qiao Hu; Xuanzhi Liu; Haijun Jiang; Qingting Ding; Zhongze Han; Jinhui Cheng; Wenjun Zhang; Yue Cao; Ruixi Zhou; et al. (IEEE Trans. Circuits Syst. II Express Briefs, 2022)

Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks. - Pengfei Jiang; Kunran Xu; Jie Yu 027; Yannan Xu; Peng Yuan; Yuan Wang; Yuting Chen; Yaxin Ding; Shuxian Lv; Zhiwei Dang; Tiancheng Gong; Yang Yang; et al. (Sci. China Inf. Sci., 2023)

High-efficient and Comprehensive Modeling of MFIM Ferroelectric Tunnel Junctions for Non-volatile/Volatile Applications. - Yu Li; Hao Jiang 024; Jie Yu 027; Xuanyu Zhao; Xiaodong Wang; Qihan Liu; Yingfen Wei; Qi Liu 010; Ming Liu 022 (IMW, 2024)