Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling. - Ru Huang 001; Runsheng Wang; Jing Zhuge; Changze Liu; Tao Yu; Liangliang Zhang; Xin Huang; Yujie Ai; Jinbin Zou; Yuchao Liu; Jiewen Fan; Huailin Liao; et al. (CICC, 2011)