An Artificial Intelligence Approach to Price Design for Improving AQM Performance. - Hao Wang 016; Jiezhi Chen; Chenda Liao; Zuohua Tian (GLOBECOM, 2011)

Design and analysis of effective price for congestion control. - Hao Wang 016; Bo Wang; Jiezhi Chen; Zuohua Tian (LCN, 2011)

Program/Erase Cycling Enhanced Lateral Charge Diffusion in Triple-Level Cell Charge-Trapping 3D NAND Flash Memory. - Rui Cao; Jixuan Wu; Wenjing Yang; Jiezhi Chen; Xiangwei Jiang (IRPS, 2019)

Scaling Behaviour of State-to-State Coupling During Hole Trapping at Si/SiO2. - Xiaolei Ma; Xiangwei Jiang; Jiezhi Chen; Liwei Wang 003; Yunfei En (IRPS, 2019)

Dual-Point Technique for Multi-Trap RTN Signal Extraction. - Xuepeng Zhan; Yifang Xi; Qianwen Wang; Weiqiang Zhang; Zhigang Ji; Jiezhi Chen (IEEE Access, 2020)

Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions. - Yachen Kong; Meng Zhang 014; Xuepeng Zhan; Rui Cao; Jiezhi Chen (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020)

Bits Mapping in Triple-level-cell (TLC) Charge-trap (CT) 3D NAND Flash Memory and its Applications to IoT Security. - Yifang Xi; Xiaotong Fang; Yachen Kong; Yifan Guo; Hongzhe Lin; Xuepeng Zhan; Jiezhi Chen (ICTA, 2021)

Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory. - Fei Wang 122; Yuan Li; Xiaolei Ma; Jiezhi Chen (IEEE Access, 2021)

Flash memory based computing-in-memory system to solve partial differential equations. - Yang Feng; Fei Wang; Xuepeng Zhan; Yuan Li; Jiezhi Chen (Sci. China Inf. Sci., 2021)

Work-in-Progress: High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory as Hot-data Storage. - Xiaotong Fang; Meng Zhang 014; Yifan Guo; Fei Chen; Binglu Chen; Xuepeng Zhan; Jixuan Wu; Fei Wu 005; Jiezhi Chen (CASES, 2022)

Re-LSM: A ReRAM-Based Processing-in-Memory Framework for LSM-Based Key-Value Store. - Qian Wei; Zhaoyan Shen; Yiheng Tong; Zhiping Jia; Lei Ju 001; Jiezhi Chen; Bingzhe Li (ICCAD, 2022)

Large Suppression to Lateral Charge Migration (LCM) Related Error Bits in Charge-Trap TLC 3D NAND Flash. - Kenie Xie; Pena Guo; Fei Chen; Binglu Chen; Xiaotong Fang; Jixuan Wu; Xuepeng Zhan; Jiezhi Chen (ICTA, 2022)

Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors. - Xuepeng Zhan; Jiezhi Chen; Zhigang Ji (Sci. China Inf. Sci., 2022)

Voltage and temperature dependence of Random Telegraph Noise and their impacts on random number generator. - Mingtao Xu; Bo Chen; Qi Jin; Lu Tai; Xuepeng Zhan; Jiezhi Chen (Microelectron. J., 2022)

Long Time-Series Mapping and Change Detection of Coastal Zone Land Use Based on Google Earth Engine and Multi-Source Data Fusion. - Dong Chen; Yafei Wang; Zhenyu Shen; Jinfeng Liao; Jiezhi Chen; Shaobo Sun (Remote. Sens., 2022)

Spatiotemporal Pattern Analysis of Land Use Functions in Contiguous Coastal Cities Based on Long-Term Time Series Remote Sensing Data: A Case Study of Bohai Sea Region, China. - Yuxuan Ye; Yafei Wang; Jinfeng Liao; Jiezhi Chen; Yangfan Zou; Yuan Liu; Chunye Feng (Remote. Sens., 2022)

Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory. - Menghua Jia; Yachen Kong; Xuepeng Zhan; Meng Zhang 014; Fei Wu 005; Jiezhi Chen (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2022)

Experimentally-Validated Crossbar Model for Defect-Aware Training of Neural Networks. - Ruibin Mao; Bo Wen; Mingrui Jiang; Jiezhi Chen; Can Li (IEEE Trans. Circuits Syst. II Express Briefs, 2022)

Flash-based Computing-in-memory Architectures with High-accuracy and Robust Reliabilities for General-purpose Applications. - Yang Feng; Yueran Qi; Xuepeng Zhan; Jixuan Wu; Jiezhi Chen (ASICON, 2023)

One-shot Read Processing to Enhance Cold Data Retention in Charge-trap TLC 3D NAND Flash. - Shaoqi Yang; Xiaohuan Zhao; Kenie Xie; Xuepeng Zhan; Jixuan Wu; Jiezhi Chen (ASICON, 2023)

Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD. - Zhichao Du; Chuanxue Sun; Xiaoyu Dou; Pengpeng Sang; Xuepeng Zhan; Chengji Jin; Jixuan Wu; Jiezhi Chen (ICTA, 2023)

Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer Deposition. - Junyao Mei; Bo Chen; Pengpeng Sang; Jixuan Wu; Xuepeng Zhan; Jiezhi Chen (ICTA, 2023)

Error Bits Recovering in 3D NAND Flash Memory: A Novel State-Shift Re-Program (SRP) Scheme. - Xiaohuan Zhao; Shaoqi Yang; Kenie Xie; Yang Feng; Qianwen Wang; Pengpeng Sang; Xuepeng Zhan; Jixuan Wu; Jiezhi Chen (ICTA, 2023)

Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding. - Dong Zhang; Jixuan Wu; Qiwen Kong; Zuopu Zhou; Long Liu; Kaizhen Han; Chen Sun 010; Xiaolin Wang 007; Gan Liu; Leming Jiao; Zijie Zheng; Yuye Kang; et al. (VLSI Technology and Circuits, 2023)

Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing. - Shuhao Wu; Bo Chen; Chengcheng Wang; Junyao Mei; Maoying Bai; Xuepeng Zhan; Jixuan Wu; Junshuai Chai; Hao Xu; Xiaolei Wang; Jiezhi Chen (Microelectron. J., 2023)

High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage. - Xiaotong Fang; Meng Zhang 014; Yifan Guo; Fei Chen; Binglu Chen; Xuepeng Zhan; Jixuan Wu; Fei Wu 005; Jiezhi Chen (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2023)

Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing. - Yang Feng; Bing Chen; Mingfeng Tang; Yuerang Qi; Maoying Bai; Chengcheng Wang; Hai Wang; Xuepeng Zhan; Junyu Zhang; Jing Liu; Jixuan Wu; Jiezhi Chen (Sci. China Inf. Sci., 2023)

First Demonstration of BEOL-Compatible 3D Vertical FeNOR. - Yang Feng; Dong Zhang; Chen Sun 010; Zijie Zheng; Yue Chen; Qiwen Kong; Gan Liu; Yuye Kang; Kaizhen Han; Zuopu Zhou; Gengchiau Liang; Kai Ni 004; et al. (VLSI Technology and Circuits, 2024)

Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism. - Dong Zhang; Yang Feng; Zijie Zheng; Chen Sun 010; Qiwen Kong; Gan Liu; Zuopu Zhou; Gengchiau Liang; Kai Ni 004; Jixuan Wu; Jiezhi Chen; Xiao Gong (VLSI Technology and Circuits, 2024)

A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI. - Maoying Bai; Shuhao Wu; Hai Wang; Hua Wang; Yang Feng; Yueran Qi; Chengcheng Wang; Zheng Chai; Tai Min; Jixuan Wu; Xuepeng Zhan; Jiezhi Chen (Sci. China Inf. Sci., 2024)

Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities. - Yang Feng; Zhaohui Sun; Chengcheng Wang; Xinyi Guo; Junyao Mei; Yueran Qi; Jing Liu; Junyu Zhang; Jixuan Wu; Xuepeng Zhan; Jiezhi Chen (CoRR, 2024)

High-Precision Error Bit Prediction for 3D QLC NAND Flash Memory: Observations, Analysis, and Modeling. - Guangkuo Yang; Meng Zhang 014; Peng Guo; Xuepeng Zhan; Shaoqi Yang; Xiaohuan Zhao; Xinyi Guo; Pengpeng Sang; Jixuan Wu; Fei Wu 005; Jiezhi Chen (IEEE Trans. Computers, 2025)

Retention Accelerated Testing for 3-D QLC nand Flash Memory: Characterization, Analysis, and Modeling. - Shaoqi Yang; Meng Zhang 014; Xuepeng Zhan; Peng Guo; Xiaohuan Zhao; Guangkuo Yang; Xinyi Guo; Jixuan Wu; Fei Wu 005; Jiezhi Chen (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2025)

An Efficient Flash-Based Computing-in-Memory (CIM) Demonstration of High-Precision (32-bit) Nonlinear Partial Differential Equation (PDE) Solver With Ultra-High Endurance and Reliability. - Yang Feng; Zhaohui Sun; Chengcheng Wang; Xinyi Guo; Junyao Mei; Yueran Qi; Jing Liu 035; Junyu Zhang; Jixuan Wu; Xuepeng Zhan; Peng Huang 004; Jiezhi Chen (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)