Building-in reliability in BCD (Bipolar-CMOS-DMOS) technologies. - Jifa Hao; T. E. Kopley (ASICON, 2013)

High temperature bias-stress-induced instability in power trench-gated MOSFETs. - Jifa Hao; Mark Rioux; Samia A. Suliman; Osama O. Awadelkarim (Microelectron. Reliab., 2014)

Hot carrier reliability in LDMOS devices. - Jifa Hao (ASICON, 2017)

BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs. - Jifa Hao; Amartya Ghosh; Mark Rinehimer; Joe Yedinak; Muhammad Ashraful Alam (IRPS, 2018)

Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs. - Amartya Ghosh; Jifa Hao; Michael Cook 004; Chris Kendrick; Samia A. Suliman; Gavin D. R. Hall; Tom Kopley; Osama O. Awadelkarim (IRPS, 2020)

Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS. - Jifa Hao; Yuhang Sun; Amartya Ghosh (IRPS, 2021)

Revealing stresses for plasma induced damage detection in thick oxides. - Daniel Beckmeier; Jifa Hao; Jake Choi; Matt Ring (IRPS, 2022)

Comparison of AC and DC BTI in SiC Power MOSFETs. - Amartya Ghosh; Osama O. Awadelkarim; Jifa Hao; Samia A. Suliman; Xinyu Wang (IRPS, 2022)

Enhancing Reliability of Power IC and Power Devices for AI Hardware: Addressing Gate Oxide Defects, Transient Voltage Overshoot, and BVDss Instability. - Jifa Hao; Haitham Hamed (IRPS, 2025)