Epitaxial lateral overgrowth of InP/GaAs (100) heterostructures by metalorganic chemical vapor deposition. - Deping Xiong; Xiaomin Ren; Qi Wang 036; Aiguang Ren; Jing Zhou; Jihe Lv; Shiwei Cai; Hui Huang 002; Yongqing Huang (Microelectron. J., 2007)

Temperature-controlled self-organized InP nanostructures grown on GaAs(100) substrate by MOCVD. - Jing Zhou; Xiaomin Ren; Qi Wang 036; Yongqing Huang; Jihe Lv; Hui Huang 002; Shiwei Cai (Microelectron. J., 2007)

LP-MOCVD growth of ternary BxGa1-xAs epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH3. - Qi Wang 036; Xiaomin Ren; Feihua Wang; Jianyou Feng; Jihe Lv; Jing Zhou; Shiwei Cai; Hui Huang 002; Yongqing Huang (Microelectron. J., 2008)